IS42S83200D-7TLI

The IS42S83200D-7TLI is a 256‑Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with a parallel memory interface. It uses a fully synchronous pipeline architecture with inputs and outputs referenced to the rising edge of the clock for predictable timing and high‑speed data transfer.

This device targets applications requiring mid‑density, high‑speed volatile memory with programmable burst and CAS latency options. Key value propositions include a 143 MHz clock option, flexible burst modes, and a compact 54‑pin TSOP‑II package suited to space‑constrained designs.

Key Features

• Core & Architecture  Fully synchronous SDRAM with internal bank structure to hide row access and precharge cycles, improving effective throughput.
• Memory Organization  256 Mbit organized as 32M × 8 with 4 internal banks for standard parallel SDRAM operation.
• Performance  Clock frequency up to 143 MHz (device -7 option) with programmable CAS latency of 2 or 3 clocks; typical access time from clock is 5.4 ns (CAS = 3).
• Data Transfer & Burst Control  LVTTL interface supporting programmable burst lengths (1, 2, 4, 8, full page) and sequential/interleave burst sequences, plus burst read/write and burst read/single write capability with burst termination options.
• Refresh & Reliability  Auto Refresh (CBR) and Self Refresh supported; refresh options include 8K cycles per 16 ms or 64 ms depending on device grade as specified in the datasheet.
• Power  Single power supply operation at 3.3 V ±0.3 V (documented supply range 3.0 V to 3.6 V).
• Package & Temperature  54‑pin TSOP‑II package (0.400", 10.16 mm width) with an operating temperature range documented as −40 °C to +85 °C (TA).

Unique Advantages

• Flexible timing options: Programmable CAS latency (2 or 3 clocks) and multiple burst lengths allow tuning for different system timing and throughput requirements.
• High‑speed synchronous interface: 143 MHz clock support and 5.4 ns access time (CAS = 3) deliver predictable, high‑frequency memory cycles for time‑sensitive designs.
• Compact packaging: 54‑pin TSOP‑II package provides a small footprint option for designs with board space constraints.
• Low system integration effort: Standard LVTTL parallel interface and common SDRAM command set simplify integration into existing memory controllers and system architectures.
• Robust refresh modes: Auto and self‑refresh support with defined refresh intervals provide reliable data retention management for volatile memory applications.
• Manufacturer pedigree: Produced by ISSI (Integrated Silicon Solution Inc.), with detailed datasheet specifications available for design validation.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200D-7TLI positions itself as a practical, mid‑density SDRAM option for systems that need synchronous, parallel volatile memory with configurable burst and timing behavior. Its combination of 32M × 8 organization, programmable CAS latency, and 143 MHz clock support makes it suitable for designs that require predictable timing and flexible data transfer modes.

This device is well suited for engineers and procurement teams seeking a compact TSOP‑II packaged SDRAM from a known memory vendor. The documented electrical, timing, and refresh specifications provide the detail required for integration, validation, and long‑term support planning.

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