IS42S83200D-6TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 405 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S83200D-6TLI-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S83200D-6TLI-TR is a 256-Mbit synchronous DRAM (SDRAM) organized as 32M x 8 with a parallel memory interface and pipeline architecture for high-speed data transfer. It operates from a single 3.3V supply and supports programmable CAS latency, burst read/write modes, and internal bank management to optimize throughput.

Designed for systems requiring compact, fast volatile memory, this device is offered in a 54-pin TSOP-II package and supports industrial temperature operation, making it suitable for embedded and industrial applications that need reliable synchronous DRAM performance.

Key Features

  • Memory Configuration  32M x 8 organization delivering 256 Mbit of SDRAM in a single device.
  • High-speed Synchronous Operation  Fully synchronous architecture with clocked inputs referenced to the rising edge; supported clock frequency up to 166 MHz (–6 speed grade) and access time as low as 5.4 ns (CAS latency = 3).
  • Power  Single power supply: 3.3V ±0.3V (specified supply range 3.0V to 3.6V).
  • programmable burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page), selectable sequential/interleave burst sequences, and programmable CAS latency (2 or 3 clocks) to match system timing needs.
  • Refresh and Low-power Modes  Supports auto-refresh (CBR) and self-refresh; refresh options include 8K cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
  • Internal Bank Management  Internal banking hides row access/precharge latency and enables random column addressing every clock cycle for improved data throughput.
  • Interface  LVTTL-compatible interface with burst read/write and burst read/single write capability; supports burst termination via burst stop and precharge.
  • Package and Temperature  Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature specified from −40°C to +85°C (TA).

Typical Applications

  • Embedded Systems  Used as synchronous DRAM storage in embedded controllers and data buffering where a parallel SDRAM interface and compact TSOP-II footprint are required.
  • Industrial Equipment  Provides volatile memory for industrial systems that require operation across −40°C to +85°C and need self-refresh/auto-refresh capabilities.
  • High-speed Data Buffers  Suitable for designs that need pipeline architecture and internal bank management to support continuous high-throughput read/write operations.

Unique Advantages

  • High clock-rate support: The –6 speed grade supports up to 166 MHz operation, enabling lower access latencies and higher data rates.
  • Flexible burst control: Programmable burst lengths and sequences let designers tune transfer patterns for sequential or interleaved access to match system workloads.
  • Robust refresh options: Auto-refresh and self-refresh modes with selectable refresh periods (8K/16 ms or 8K/64 ms) help maintain data integrity in diverse operating conditions.
  • Compact, industry-ready package: 54-pin TSOP-II package provides a small footprint for space-constrained PCBs while supporting industrial temperature operation.
  • Reduced row/column latency: Internal bank architecture hides row access/precharge delays and supports random column addressing every clock cycle for efficient access patterns.
  • Standard supply compatibility: Operates from a 3.3V single supply (3.0–3.6V range) and uses LVTTL signaling for straightforward integration with common logic families.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200D-6TLI-TR delivers a practical combination of speed, flexibility, and form factor for designs that require 256 Mbit of synchronous DRAM in a TSOP-II package. Its programmable CAS latency, burst modes, and internal bank management make it well suited for applications demanding predictable, high-throughput memory access.

This part is appropriate for engineers designing compact embedded or industrial systems that need a single-supply 3.3V SDRAM solution with industrial temperature capability and standard LVTTL interfacing. The device’s refresh and low-power modes add reliability for systems that may experience extended idle periods or varied operating conditions.

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