IS42S83200D-6TLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 405 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S83200D-6TLI-TR – IC DRAM 256MBIT PAR 54TSOP II
The IS42S83200D-6TLI-TR is a 256-Mbit synchronous DRAM (SDRAM) organized as 32M x 8 with a parallel memory interface and pipeline architecture for high-speed data transfer. It operates from a single 3.3V supply and supports programmable CAS latency, burst read/write modes, and internal bank management to optimize throughput.
Designed for systems requiring compact, fast volatile memory, this device is offered in a 54-pin TSOP-II package and supports industrial temperature operation, making it suitable for embedded and industrial applications that need reliable synchronous DRAM performance.
Key Features
- Memory Configuration 32M x 8 organization delivering 256 Mbit of SDRAM in a single device.
- High-speed Synchronous Operation Fully synchronous architecture with clocked inputs referenced to the rising edge; supported clock frequency up to 166 MHz (–6 speed grade) and access time as low as 5.4 ns (CAS latency = 3).
- Power Single power supply: 3.3V ±0.3V (specified supply range 3.0V to 3.6V).
- programmable burst and CAS Programmable burst lengths (1, 2, 4, 8, full page), selectable sequential/interleave burst sequences, and programmable CAS latency (2 or 3 clocks) to match system timing needs.
- Refresh and Low-power Modes Supports auto-refresh (CBR) and self-refresh; refresh options include 8K cycles per 16 ms (A2 grade) or 64 ms (commercial/industrial/A1 grade).
- Internal Bank Management Internal banking hides row access/precharge latency and enables random column addressing every clock cycle for improved data throughput.
- Interface LVTTL-compatible interface with burst read/write and burst read/single write capability; supports burst termination via burst stop and precharge.
- Package and Temperature Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature specified from −40°C to +85°C (TA).
Typical Applications
- Embedded Systems Used as synchronous DRAM storage in embedded controllers and data buffering where a parallel SDRAM interface and compact TSOP-II footprint are required.
- Industrial Equipment Provides volatile memory for industrial systems that require operation across −40°C to +85°C and need self-refresh/auto-refresh capabilities.
- High-speed Data Buffers Suitable for designs that need pipeline architecture and internal bank management to support continuous high-throughput read/write operations.
Unique Advantages
- High clock-rate support: The –6 speed grade supports up to 166 MHz operation, enabling lower access latencies and higher data rates.
- Flexible burst control: Programmable burst lengths and sequences let designers tune transfer patterns for sequential or interleaved access to match system workloads.
- Robust refresh options: Auto-refresh and self-refresh modes with selectable refresh periods (8K/16 ms or 8K/64 ms) help maintain data integrity in diverse operating conditions.
- Compact, industry-ready package: 54-pin TSOP-II package provides a small footprint for space-constrained PCBs while supporting industrial temperature operation.
- Reduced row/column latency: Internal bank architecture hides row access/precharge delays and supports random column addressing every clock cycle for efficient access patterns.
- Standard supply compatibility: Operates from a 3.3V single supply (3.0–3.6V range) and uses LVTTL signaling for straightforward integration with common logic families.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS42S83200D-6TLI-TR delivers a practical combination of speed, flexibility, and form factor for designs that require 256 Mbit of synchronous DRAM in a TSOP-II package. Its programmable CAS latency, burst modes, and internal bank management make it well suited for applications demanding predictable, high-throughput memory access.
This part is appropriate for engineers designing compact embedded or industrial systems that need a single-supply 3.3V SDRAM solution with industrial temperature capability and standard LVTTL interfacing. The device’s refresh and low-power modes add reliability for systems that may experience extended idle periods or varied operating conditions.
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