IS42S83200D-6TL-TR

The IS42S83200D-6TL-TR is a 256‑Mbit synchronous DRAM organized as 32M x 8 with four internal banks, implemented in a pipeline architecture for high-speed data transfer. It provides a parallel SDRAM interface with fully synchronous operation referenced to the rising edge of the clock.

This device is targeted at commercial systems requiring a 3.3V single-supply SDRAM solution with support for programmable burst lengths, selectable CAS latency, and board-level package options in 54‑pin TSOP‑II (10.16 mm width).

Key Features

• Memory Architecture  256 Mbit SDRAM organized as 32M x 8 with four internal banks to support pipelined operation.
• Performance  Clock frequency up to 166 MHz (CAS‑latency = 3) and access time from clock as low as 5.4 ns for CAS‑latency = 3.
• Fully Synchronous Interface  All signals referenced to the positive clock edge; LVTTL I/O and random column address every clock cycle.
• Burst and Latency Control  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Power Management  Auto Refresh (CBR) and Self Refresh support with 8K refresh cycles options (16 ms for A2 grade or 64 ms for commercial/A1 grade); single power supply 3.3V ±0.3V (specified voltage range 3.0 V to 3.6 V).
• Package and Temperature  Supplied in a 54‑pin TSOP‑II package (0.400", 10.16 mm width); operating temperature range 0°C to +70°C (TA).
• System Reliability  Internal bank architecture hides row access/precharge to improve effective throughput for burst operations.

Typical Applications

• Commercial electronic systems  Board‑level memory for commercial equipment operating within 0°C to +70°C that require parallel SDRAM capacity and timing control.
• Embedded system memory  On‑board SDRAM for embedded platforms that need programmable burst behavior and selectable CAS latency.
• Consumer devices  Memory subsystem component for consumer hardware requiring a 256 Mbit synchronous DRAM in a compact 54‑pin TSOP‑II package.

Unique Advantages

• High-speed synchronous operation: Up to 166 MHz clocking and pipeline architecture enable tight timing and predictable access performance.
• Flexible burst and latency configuration: Programmable burst lengths and CAS latency options let designers tune throughput and latency for target workloads.
• Single-supply simplicity: Operates from a single 3.3V supply (3.0 V to 3.6 V range), simplifying power rail design.
• Reduced row-access overhead: Internal bank structure hides row access/precharge to improve sustained burst transfers.
• Compact board-level package: 54‑pin TSOP‑II (10.16 mm width) offers a standard, compact footprint for dense PCB designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200D-6TL-TR positions itself as a straightforward, high-frequency 256‑Mbit SDRAM solution for commercial applications that need programmable burst control, selectable CAS latency, and predictable synchronous timing. Its single‑supply operation and internal bank architecture support designs focused on sustained burst throughput and simplified power delivery.

This device is well suited for designers seeking a compact TSOP‑II packaged SDRAM with explicit timing characteristics (up to 166 MHz, 5.4 ns access time at CL=3) and standard refresh modes. It provides clear, verifiable specifications for integration into commercial memory subsystems where those electrical and thermal limits meet system requirements.

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