IS42S83200J-7TL-TR

The IS42S83200J-7TL-TR is a 256 Mbit volatile SDRAM device organized as 32M × 8 that implements a parallel memory interface. It delivers synchronous DRAM access with specified timing characteristics for embedded and board-level memory applications.

Packaged in a 54‑lead TSOP II (0.400", 10.16 mm width) and specified for a 0 °C to 70 °C ambient range, the device operates from a 3.0 V to 3.6 V supply and targets designs requiring compact, parallel SDRAM memory in standard surface-mount form factors.

Key Features

• Memory Architecture 256 Mbit SDRAM organized as 32M × 8, providing byte-wide parallel data paths.
• SDRAM Technology Synchronous DRAM core offering timed access suitable for parallel memory systems.
• Performance Specified clock frequency of 143 MHz and an access time of 5.4 ns, enabling predictable synchronous operation.
• Power Operates from a 3.0 V to 3.6 V supply range to match common 3 V-class system rails.
• Package 54‑lead TSOP II package (0.400", 10.16 mm width) for compact board-level mounting and density.
• Operating Range Rated for an ambient temperature range of 0 °C to 70 °C (TA).
• Interface Parallel memory interface for direct connection to memory buses and controllers designed for parallel SDRAM.
• Mounting Type Volatile memory device intended for surface-mount assembly in standard PCB processes.

Typical Applications

• Memory Subsystems — Provides 256 Mbit of parallel SDRAM storage (32M × 8) for system memory and buffering in board-level designs.
• Embedded Systems — Compact 54‑TSOP II package and 3.0–3.6 V operation suit embedded designs that require synchronous parallel DRAM.
• Frame Buffering and Data Buffers — Synchronous operation with defined access time and clock frequency supports buffering tasks in digital systems.

Unique Advantages

• Standard 32M × 8 Organization: Widely used memory organization simplifies integration with parallel memory controllers and system firmware.
• Predictable Timing: 5.4 ns access time and a 143 MHz clock specification provide clear timing targets for system design and validation.
• Wide 3.0–3.6 V Supply Range: Compatible with common 3 V-class system power rails, easing power-rail design compatibility.
• Compact TSOP II Package: 54‑lead TSOP II (10.16 mm width) enables higher memory density on space-constrained PCBs.
• Temperature Rating: Specified 0 °C to 70 °C ambient operating range for standard commercial-environment applications.

Why Choose IS42S83200J-7TL-TR?

The IS42S83200J-7TL-TR delivers a compact, parallel SDRAM option with a 256 Mbit capacity and standard 32M × 8 organization, combining defined timing (5.4 ns access time, 143 MHz clock specification) with a common 3.0–3.6 V supply range. Its 54‑lead TSOP II package supports board-level designs that require a balance of density and solderable form factor.

This device is suited for engineers specifying synchronous parallel DRAM for system memory, buffering, or embedded applications where the documented electrical, timing, and package attributes align with design requirements. It is manufactured by Integrated Silicon Solution Inc., providing a clear vendor source for procurement and technical reference.

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