IS42S83200J-7TLI-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 262 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS42S83200J-7TLI-TR – IC DRAM 256MBIT PAR 54TSOP II
The IS42S83200J-7TLI-TR from ISSI is a 256 Mbit volatile SDRAM organized as 32M × 8 with a parallel memory interface. It delivers random access memory suitable for systems that require mid-density SDRAM in a compact 54-TSOP II package.
Designed for 3.0 V–3.6 V operation with an operating temperature range of −40°C to 85°C, this device targets applications needing a stable, fast-access parallel DRAM option with a 143 MHz clock capability and 5.4 ns access time.
Key Features
- Memory Core 256 Mbit capacity organized as 32M × 8 in SDRAM architecture for parallel memory implementations.
- Performance Supports a clock frequency of 143 MHz and an access time of 5.4 ns to meet moderate-speed system memory requirements.
- Interface Parallel memory interface suitable for direct connection to parallel bus controllers and memory controllers.
- Voltage Operates from 3.0 V to 3.6 V, accommodating standard 3 V SDRAM power domains.
- Package Available in a 54-TSOP II (0.400", 10.16 mm width) package for space-conscious board layouts.
- Temperature Range Rated for −40°C to 85°C ambient operation (TA) for use across extended temperature environments.
Typical Applications
- Parallel memory expansion — Provides 256 Mbit SDRAM capacity for systems requiring additional parallel DRAM storage.
- Buffering and frame storage — Used where moderate-speed read/write buffering is needed in parallel-data systems.
- Embedded system memory — Serves as main or auxiliary DRAM in embedded designs that support a parallel SDRAM interface.
Unique Advantages
- Compact 54-TSOP II package: Enables higher component density and straightforward placement for space-limited PCBs.
- Mid-density 256 Mbit capacity: Balances storage size and board-level footprint for systems that need more than small SRAM buffers but less than high-density DRAM.
- Fast access characteristics: 5.4 ns access time and 143 MHz clock support responsive memory operations for parallel interfaces.
- Standard 3.0 V operation: Compatible with common 3 V power rails, simplifying power supply design.
- Extended operating temperature: −40°C to 85°C rating supports deployment in environments with wide temperature swings.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS42S83200J-7TLI-TR offers a clear specification set for designers who need a 256 Mbit parallel SDRAM with defined performance, voltage, and temperature characteristics. Its 32M × 8 organization, 5.4 ns access time, and 143 MHz clock capability make it suitable for systems requiring predictable, mid-range SDRAM performance in a compact 54-TSOP II package.
This device is well suited to engineers and procurement teams building or maintaining hardware that requires a reliable parallel DRAM option with standard 3.0 V operation and extended ambient temperature support. Its combination of capacity, package, and electrical specs supports scalable system designs and straightforward integration.
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