IS42S83200J-7TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 262 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S83200J-7TLI-TR – IC DRAM 256MBIT PAR 54TSOP II

The IS42S83200J-7TLI-TR from ISSI is a 256 Mbit volatile SDRAM organized as 32M × 8 with a parallel memory interface. It delivers random access memory suitable for systems that require mid-density SDRAM in a compact 54-TSOP II package.

Designed for 3.0 V–3.6 V operation with an operating temperature range of −40°C to 85°C, this device targets applications needing a stable, fast-access parallel DRAM option with a 143 MHz clock capability and 5.4 ns access time.

Key Features

  • Memory Core 256 Mbit capacity organized as 32M × 8 in SDRAM architecture for parallel memory implementations.
  • Performance Supports a clock frequency of 143 MHz and an access time of 5.4 ns to meet moderate-speed system memory requirements.
  • Interface Parallel memory interface suitable for direct connection to parallel bus controllers and memory controllers.
  • Voltage Operates from 3.0 V to 3.6 V, accommodating standard 3 V SDRAM power domains.
  • Package Available in a 54-TSOP II (0.400", 10.16 mm width) package for space-conscious board layouts.
  • Temperature Range Rated for −40°C to 85°C ambient operation (TA) for use across extended temperature environments.

Typical Applications

  • Parallel memory expansion — Provides 256 Mbit SDRAM capacity for systems requiring additional parallel DRAM storage.
  • Buffering and frame storage — Used where moderate-speed read/write buffering is needed in parallel-data systems.
  • Embedded system memory — Serves as main or auxiliary DRAM in embedded designs that support a parallel SDRAM interface.

Unique Advantages

  • Compact 54-TSOP II package: Enables higher component density and straightforward placement for space-limited PCBs.
  • Mid-density 256 Mbit capacity: Balances storage size and board-level footprint for systems that need more than small SRAM buffers but less than high-density DRAM.
  • Fast access characteristics: 5.4 ns access time and 143 MHz clock support responsive memory operations for parallel interfaces.
  • Standard 3.0 V operation: Compatible with common 3 V power rails, simplifying power supply design.
  • Extended operating temperature: −40°C to 85°C rating supports deployment in environments with wide temperature swings.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS42S83200J-7TLI-TR offers a clear specification set for designers who need a 256 Mbit parallel SDRAM with defined performance, voltage, and temperature characteristics. Its 32M × 8 organization, 5.4 ns access time, and 143 MHz clock capability make it suitable for systems requiring predictable, mid-range SDRAM performance in a compact 54-TSOP II package.

This device is well suited to engineers and procurement teams building or maintaining hardware that requires a reliable parallel DRAM option with standard 3.0 V operation and extended ambient temperature support. Its combination of capacity, package, and electrical specs supports scalable system designs and straightforward integration.

Request a quote or contact sales to inquire about pricing, availability, and technical support for the IS42S83200J-7TLI-TR.

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