IS42S83200L-6TL

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 70 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization32M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S83200L-6TL – 256 Mbit SDRAM (54-TSOP II)

The IS42S83200L-6TL from ISSI is a 256 Mbit volatile SDRAM organized as 32M x 8. It provides synchronous DRAM memory with a 166 MHz clock frequency and a 5.4 ns access time for temporary data storage in electronic systems.

Designed for board-level integration, the device operates from a 3.0 V to 3.6 V supply, uses an LVTTL memory interface, and is supplied in a 54-TSOP II (0.400", 10.16 mm width) package with an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 32M x 8 for volatile data storage and transient memory needs.
  • Performance  Operates with a clock frequency of 166 MHz and an access time of 5.4 ns to support fast synchronous memory transactions.
  • Interface  Standard LVTTL memory interface for integration with compatible logic-level systems.
  • Power  Single-supply operation from 3.0 V to 3.6 V to match typical 3 V system power rails.
  • Package & Temperature  Supplied in a 54-TSOP II (0.400", 10.16 mm width) package; specified operating ambient temperature range is 0°C to 70°C.

Typical Applications

  • Memory expansion for embedded systems  Provides 256 Mbit of volatile SDRAM (32M x 8) for designs that require external synchronous memory with an LVTTL interface.
  • Data buffering and temporary storage  166 MHz clocking and 5.4 ns access time make the device suitable for temporary buffering and frame storage where synchronous DRAM is required.
  • Compact board-level integration  The 54-TSOP II package and 3.0–3.6 V supply range support space-constrained PCB designs operating within a 0°C to 70°C ambient range.

Unique Advantages

  • Standard SDRAM architecture: 32M x 8 organization provides a straightforward memory map for systems requiring 256 Mbit of volatile storage.
  • Deterministic timing: Specified 166 MHz clock frequency and 5.4 ns access time enable predictable synchronous memory performance.
  • Low-voltage compatibility: 3.0 V to 3.6 V supply range fits common 3 V system rails without additional power conversion.
  • Compact package size: 54-TSOP II (10.16 mm width) supports tighter PCB layouts and higher board density.
  • Industry supplier: Manufactured by ISSI, Integrated Silicon Solution Inc, providing traceable device sourcing.

Why Choose IS42S83200L-6TL?

The IS42S83200L-6TL is positioned for designs that require a 256 Mbit synchronous DRAM with defined timing (166 MHz clock, 5.4 ns access) and a 32M x 8 organization. Its LVTTL interface, 3.0–3.6 V supply range, and compact 54-TSOP II package make it suitable for board-level integration where a standard SDRAM solution is needed within a 0°C to 70°C ambient environment.

Engineers selecting this device benefit from clear electrical and mechanical characteristics useful for system-level memory planning, enabling predictable integration for transient data storage and buffering requirements.

For pricing, availability, and to request a quote for IS42S83200L-6TL, please contact sales or submit a quote request through your normal procurement channels.

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