IS42S83200L-7TL
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,388 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S83200L-7TL – IC DRAM 256MBIT PAR 54TSOP II
The IS42S83200L-7TL is a 256 Mbit synchronous DRAM device organized as 32M × 8, provided in a 54‑pin TSOP II package. It is a volatile memory component with an LVTTL memory interface and DRAM memory format.
Key electrical and timing characteristics include operation from 3.0 V to 3.6 V, a maximum clock frequency of 143 MHz and an access time of 5.4 ns. The device is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Core 256 Mbit SDRAM organized as 32M × 8, providing synchronous DRAM storage in a compact density.
- Performance Supports up to 143 MHz clock frequency with an access time of 5.4 ns for responsive read/write operations.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Interface LVTTL memory interface for standard logic-level signaling.
- Package 54‑TSOP II package case (0.400", 10.16 mm width) suitable for board-level mounting in the specified footprint.
- Operating Conditions Specified for ambient temperatures from 0°C to 70°C (TA).
- Memory Type & Format Volatile DRAM in SDRAM architecture.
Typical Applications
- Systems requiring 256 Mbit SDRAM — Used where a 32M × 8, 256 Mbit synchronous DRAM device is required for volatile data storage and buffering.
- Board-level memory in 54‑TSOP II footprint — Appropriate for designs that specify the 54‑pin TSOP (0.400", 10.16 mm) package case.
- General-purpose volatile memory — Suitable for applications needing a DRAM device that operates at up to 143 MHz with a 3.0–3.6 V supply and 5.4 ns access time.
Unique Advantages
- Synchronous SDRAM architecture: Enables operation at a defined clock frequency (143 MHz) for predictable timing behavior.
- Compact package: 54‑TSOP II (0.400", 10.16 mm) provides a standard, space-efficient footprint for board-level integration.
- Standard LVTTL interface: Simplifies connection to compatible logic-level memory controllers or buses.
- Wide supply tolerance: 3.0 V to 3.6 V range accommodates common 3 V system rails.
- Specified access performance: 5.4 ns access time supports time-sensitive memory operations.
Why Choose IS42S83200L-7TL?
The IS42S83200L-7TL positions itself as a straightforward SDRAM option when a 256 Mbit, 32M × 8 volatile memory device is required. Its combination of 143 MHz clock capability, 5.4 ns access time, LVTTL interface and the 54‑TSOP II package makes it appropriate for designs that require a compact, synchronous DRAM element with defined supply and temperature ranges.
This device is well suited to engineers and procurement teams specifying board-level SDRAM where the listed electrical, timing and packaging parameters match system requirements, providing predictable performance and a standard footprint for integration.
Request a quote or submit an inquiry to obtain pricing, availability and ordering information for the IS42S83200L-7TL.