IS42S83200L-7TL

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,388 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization32M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S83200L-7TL – IC DRAM 256MBIT PAR 54TSOP II

The IS42S83200L-7TL is a 256 Mbit synchronous DRAM device organized as 32M × 8, provided in a 54‑pin TSOP II package. It is a volatile memory component with an LVTTL memory interface and DRAM memory format.

Key electrical and timing characteristics include operation from 3.0 V to 3.6 V, a maximum clock frequency of 143 MHz and an access time of 5.4 ns. The device is specified for an ambient operating temperature range of 0°C to 70°C.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 32M × 8, providing synchronous DRAM storage in a compact density.
  • Performance Supports up to 143 MHz clock frequency with an access time of 5.4 ns for responsive read/write operations.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Interface LVTTL memory interface for standard logic-level signaling.
  • Package 54‑TSOP II package case (0.400", 10.16 mm width) suitable for board-level mounting in the specified footprint.
  • Operating Conditions Specified for ambient temperatures from 0°C to 70°C (TA).
  • Memory Type & Format Volatile DRAM in SDRAM architecture.

Typical Applications

  • Systems requiring 256 Mbit SDRAM — Used where a 32M × 8, 256 Mbit synchronous DRAM device is required for volatile data storage and buffering.
  • Board-level memory in 54‑TSOP II footprint — Appropriate for designs that specify the 54‑pin TSOP (0.400", 10.16 mm) package case.
  • General-purpose volatile memory — Suitable for applications needing a DRAM device that operates at up to 143 MHz with a 3.0–3.6 V supply and 5.4 ns access time.

Unique Advantages

  • Synchronous SDRAM architecture: Enables operation at a defined clock frequency (143 MHz) for predictable timing behavior.
  • Compact package: 54‑TSOP II (0.400", 10.16 mm) provides a standard, space-efficient footprint for board-level integration.
  • Standard LVTTL interface: Simplifies connection to compatible logic-level memory controllers or buses.
  • Wide supply tolerance: 3.0 V to 3.6 V range accommodates common 3 V system rails.
  • Specified access performance: 5.4 ns access time supports time-sensitive memory operations.

Why Choose IS42S83200L-7TL?

The IS42S83200L-7TL positions itself as a straightforward SDRAM option when a 256 Mbit, 32M × 8 volatile memory device is required. Its combination of 143 MHz clock capability, 5.4 ns access time, LVTTL interface and the 54‑TSOP II package makes it appropriate for designs that require a compact, synchronous DRAM element with defined supply and temperature ranges.

This device is well suited to engineers and procurement teams specifying board-level SDRAM where the listed electrical, timing and packaging parameters match system requirements, providing predictable performance and a standard footprint for integration.

Request a quote or submit an inquiry to obtain pricing, availability and ordering information for the IS42S83200L-7TL.

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