IS42S86400B-7TL

The IS42S86400B-7TL is a 512 Mbit synchronous DRAM organized as 64M × 8 with a quad-bank architecture and pipeline operation. It is a fully synchronous, parallel-interface DRAM designed for high-speed data transfer in 3.3V memory systems and references all I/O to the rising edge of the clock.

Targeted for commercial-temperature designs, this device combines programmable burst operation, selectable CAS latency, and internal bank management to support memory subsystems requiring predictable, clock-referenced performance.

Key Features

• Core / Memory — 512 Mbit SDRAM organized as 64M × 8 with quad-bank architecture for concurrent row access and precharge.
• Performance — Clock frequency support up to 143 MHz for the -7 speed grade with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst & Latency — Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh & Self-Management — Auto Refresh (CBR) and Self Refresh support with 8K refresh cycles (timing options per grade: 16 ms for A2 or 64 ms for commercial/A1/industrial grades as specified).
• Interface — LVTTL-compatible parallel interface with random column addressing every clock cycle and burst read/write capabilities.
• Power — Designed for 3.3V VDD/VDDQ operation; specified supply range in product data is 3.0 V to 3.6 V.
• Package & Mounting — Available in a 54-pin TSOP-II package (0.400" / 10.16 mm width) for space-efficient board mounting.
• Operating Temperature — Commercial operating temperature range: 0°C to +70°C (TA) as listed in the product specifications.

Typical Applications

• 3.3V Memory Subsystems — Use where a 512 Mbit synchronous parallel DRAM is required in a 3.3V memory architecture.
• Board-Level SDRAM Replacement — Fits designs requiring a 54-pin TSOP-II package and 64M × 8 organization for parallel DRAM implementations.
• Clock-Synchronous Designs — Systems that rely on fully synchronous, clock-referenced memory operation with programmable burst and CAS options.

Unique Advantages

• Flexible Performance Modes: Programmable CAS latency and burst length let designers tune throughput and latency to match system timing requirements.
• Predictable, Clock-Referenced Operation: Fully synchronous design with pipeline architecture and LVTTL interface yields consistent timing referenced to the rising clock edge.
• Built-In Refresh and Self-Refresh: Auto and self-refresh capabilities reduce external refresh management and support sustained data retention across operating modes.
• Compact, Industry-Standard Package: 54-pin TSOP-II package provides a compact footprint for board-level memory implementations.
• Commercial Temperature Rating: Specified 0°C to +70°C operating range for commercial-grade applications.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S86400B-7TL delivers a synchronous, parallel 512 Mbit DRAM option with programmable burst behavior, selectable CAS latency and a 54-pin TSOP-II package for compact board-level memory solutions. Its 143 MHz (-7) speed grade performance and pipeline architecture provide a stable, clock-referenced memory interface for systems built around 3.3V supply rails.

This device is suited for designers and procurement teams specifying commercial-temperature SDRAM for memory subsystems that require predictable timing, refresh management, and flexible burst modes. The combination of organization, package, and interface options supports straightforward integration into 3.3V synchronous memory designs.

Request a quote or submit a product inquiry to receive pricing, availability, and ordering information for the IS42S86400B-7TL.