IS42S86400B-7TL-TR

The IS42S86400B-7TL-TR is a 512 Mbit synchronous DRAM organized as 64M × 8 with a quad-bank architecture and fully synchronous, pipeline operation. It is designed for parallel SDRAM memory systems operating from a 3.0 V to 3.6 V supply (3.3 V operation specified in the device datasheet).

Built for board-level memory integration, the device offers programmable burst lengths and CAS latencies, LVTTL signaling and a 54-pin TSOP-II (10.16 mm width) package, making it suitable for designs that require a compact, parallel SDRAM component with defined commercial temperature support.

Key Features

• Core & Architecture  Quad-bank synchronous DRAM with pipeline architecture; all input/output signals referenced to the rising clock edge.
• Memory Capacity & Organization  512 Mbit total capacity, organized as 64M × 8 for straightforward parallel memory mapping.
• Performance  -7 timing supports a clock frequency up to 143 MHz and an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Access  Programmable burst lengths (1, 2, 4, 8, full page), selectable burst sequence (sequential/interleave), and selectable CAS latency (2 or 3 clocks) for flexible timing trade-offs.
• Refresh & Power Management  Supports Auto Refresh (CBR) and Self Refresh with specified refresh cycles (8K) at defined intervals by grade as documented in the datasheet.
• Interface & Signaling  Parallel memory interface with LVTTL signaling for compatibility with parallel SDRAM controllers.
• Supply & Package  Voltage supply range 3.0 V to 3.6 V (3.3 V specified); available in a 54-pin TSOP-II package (0.400" / 10.16 mm width) for board-level footprint compatibility.
• Operating Temperature  Commercial temperature range: 0°C to +70°C (TA) as specified for the commercial grade.

Typical Applications

• Embedded systems  Parallel SDRAM memory for embedded boards that require 512 Mbit density in a 54-pin TSOP-II footprint.
• Board-level memory expansion  Replacement or upgrade of parallel DRAM in designs that use 3.3 V supply rails and LVTTL signaling.
• Memory subsystems with programmable timing  Applications that benefit from selectable CAS latency and programmable burst lengths for timing optimization.
• Commercial temperature applications  Systems and products designed for 0°C to +70°C operating conditions.

Unique Advantages

• Flexible timing control: Programmable CAS latency (2 or 3 clocks) and burst lengths enable designers to tune performance and bus utilization.
• Synchronous high-speed operation: Pipeline architecture and clocked I/O support up to 143 MHz operation for deterministic timing referenced to the clock edge.
• Compact industry package: 54-pin TSOP-II footprint (10.16 mm width) simplifies integration into board designs that use standard TSOP memory packages.
• Standard supply compatibility: Operates across a 3.0 V to 3.6 V range with 3.3 V specified, matching common SDRAM power rails.
• Built-in refresh modes: Auto Refresh and Self Refresh modes with documented refresh cycles reduce external refresh management complexity.
• Manufacturer documentation: Backed by detailed ISSI device specification and timing information for design validation.

Why Choose IS42S86400B-7TL-TR?

The IS42S86400B-7TL-TR delivers a well-documented 512 Mbit synchronous DRAM solution that combines programmable latency and burst options with a standard 54-pin TSOP-II package and 3.3 V-class operation. Its synchronous pipeline architecture and quad-bank organization provide predictable timing and flexible access patterns for parallel SDRAM designs.

This device is suited to engineers and procurement teams specifying board-level SDRAM density in commercial-temperature systems that require clear timing parameters (143 MHz / 5.4 ns access time at CAS = 3) and a compact TSOP-II footprint. The ISSI specification provides the technical reference needed for integration and verification.

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