IS42S86400D-6TL-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 868 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S86400D-6TL-TR – IC DRAM 512Mbit PAR 54TSOP II

The IS42S86400D-6TL-TR is a 512 Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It is organized as 64M × 8 with a parallel memory interface and is supplied in a 54-pin TSOP-II package.

Designed for high-speed, fully synchronous operation, this device supports programmable burst lengths and CAS latencies, internal bank architecture for hidden row access/precharge, and standard refresh modes to maintain data integrity in volatile memory applications.

Key Features

  • Core / Architecture  Fully synchronous SDRAM with internal bank structure that hides row access and precharge for continuous data flow.
  • Memory Organization  512 Mbit capacity organized as 64M × 8 across four internal banks.
  • Performance  Rated for 166 MHz operation (–6 speed grade) with an access time from clock as low as 5.4 ns (CAS latency = 3).
  • Programmable Burst and Latency  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
  • Refresh and Power Management  Supports Auto Refresh and Self Refresh modes with 8K refresh cycles per 64 ms to preserve stored data in volatile operation.
  • Interface  LVTTL-compatible signaling with a parallel memory interface and support for random column address every clock cycle.
  • Power  Supply voltage specified from 3.0 V to 3.6 V for the device variant listed.
  • Package and Temperature  Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C (TA).

Unique Advantages

  • Synchronous pipeline architecture: Enables high-speed data transfer with all I/O referenced to the rising clock edge for predictable timing.
  • Flexible data handling: Programmable burst lengths and sequence options let designers match memory behavior to system access patterns.
  • Configurable latency: CAS latency selectable between 2 and 3 clocks to balance throughput and timing constraints.
  • Robust refresh support: Auto Refresh and Self Refresh with 8K cycles per 64 ms help maintain data integrity in volatile applications.
  • Compact package: 54-pin TSOP-II footprint offers a small form factor for board-level integration while providing a parallel x8 memory interface.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S86400D-6TL-TR delivers a practical balance of density, speed and package size for systems requiring 512 Mbit of volatile SDRAM in a 54-pin TSOP-II. Its synchronous pipeline design, programmable burst/latency options and built-in refresh modes make it suitable for designs that need predictable, high-rate parallel memory access within the specified commercial temperature and voltage ranges.

This device is well suited to engineers specifying a compact, parallel SDRAM solution that requires configurable performance characteristics and standard LVTTL interfacing, backed by ISSI’s documented device specifications.

If you need pricing or availability information or would like to request a quote, please submit a sales inquiry or request a quote for the IS42S86400D-6TL-TR.

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