IS42S86400D-7TL-TR

The IS42S86400D-7TL-TR is a 512Mbit synchronous DRAM organized as 64M × 8 with a parallel memory interface in a 54-pin TSOP II package. It implements a fully synchronous, pipelined architecture with internal bank management to support high-speed data transfers.

Designed for systems requiring fast, low-latency parallel DRAM, this device offers a 143 MHz clock option (–7 timing grade), 5.4 ns access time, programmable burst modes and CAS latency, and operation from a 3.0 V to 3.6 V supply within a 0 °C to 70 °C ambient range.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture and internal banks to hide row access and precharge latency.
• Memory Organization & Capacity  512 Mbit total organized as 64M × 8 with 4 internal banks.
• Performance & Timing  –7 timing grade supports a 143 MHz clock frequency with an access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst & Access Modes  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles every 64 ms.
• Interface  Parallel memory interface with LVTTL signaling.
• Power  Supply range specified as 3.0 V to 3.6 V for this device variant.
• Package & Mounting  54-pin TSOP II (0.400", 10.16 mm width) surface-mount package.
• Operating Range  Commercial temperature grade: 0 °C to +70 °C (TA).

Typical Applications

• Parallel memory subsystems  Used as high-speed synchronous DRAM in systems that require a 512 Mbit parallel memory device with LVTTL interface.
• Embedded memory expansion  Suitable for designs needing a 64M × 8 memory organization with programmable burst and CAS latency options for flexible timing.
• High-throughput buffering  Applicable where synchronous, pipelined DRAM with internal bank management and auto/self-refresh is required to support continuous data transfer.

Unique Advantages

• Deterministic timing options: The –7 timing grade provides 143 MHz operation and 5.4 ns access time, enabling predictable performance for timing-sensitive designs.
• Flexible burst control: Programmable burst lengths and sequence modes simplify data transfer patterns and system memory controller integration.
• Integrated refresh management: Auto Refresh and Self Refresh with 8K cycles per 64 ms reduce external refresh overhead and simplify maintenance of data integrity.
• Standard TSOP II package: 54-pin TSOP II footprint (10.16 mm width) provides a compact, industry-standard mounting option for surface-mount assemblies.
• LVTTL signaling compatibility: Parallel LVTTL interface supports straightforward interfacing to compatible memory controllers and logic.
• Wide supply tolerance: Operates across a 3.0 V to 3.6 V supply range to accommodate typical 3.3 V system rails.

Why Choose IC DRAM 512Mbit PAR 54TSOP II?

The IS42S86400D-7TL-TR positions itself as a practical, specification-driven choice for designs that require a 512 Mbit synchronous DRAM with parallel interface and compact TSOP II packaging. Its combination of 143 MHz timing grade, programmable CAS and burst options, and built-in refresh features makes it suitable for systems that demand predictable, high-speed memory behavior.

This device is well suited for engineers and procurement teams targeting robust, commercially rated SDRAM for embedded and system-level memory applications where defined electrical and timing characteristics, compact package footprint, and LVTTL interfacing are required.

If you need pricing, lead-time or to request a quote for IS42S86400D-7TL-TR, submit a request for a quote or contact sales to obtain product availability and ordering information.