IS42S86400F-6TL

The IS42S86400F-6TL is a 512 Mbit volatile SDRAM device organized as 64M × 8 with a parallel DRAM interface. It implements SDRAM architecture and is specified for operation from a 3.0 V to 3.6 V supply.

This device delivers a 166 MHz clock frequency and a 5.4 ns access time in a 54‑TSOP II (0.400", 10.16 mm width) package, and is specified for ambient operating temperatures from 0°C to 70°C (TA).

Key Features

• Memory Architecture Organized as 64M × 8 to provide a total memory size of 512 Mbit in a parallel DRAM format.
• SDRAM Technology Implements SDRAM parallel architecture for synchronous memory operation at the specified clock rate.
• Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns.
• Power Operates from a 3.0 V to 3.6 V supply range.
• Interface Parallel memory interface suitable for direct integration into parallel memory buses.
• Package Available in a 54‑TSOP II package (0.400", 10.16 mm width) intended for surface-mount PCB assembly.
• Operating Temperature Specified for ambient temperatures from 0°C to 70°C (TA).

Typical Applications

• Embedded Memory Expansion Use as 512 Mbit parallel SDRAM to expand system memory in embedded designs that support a parallel DRAM interface.
• Consumer Electronics Memory Integration as system or buffer memory in consumer devices that operate within the 0°C to 70°C ambient range and require 3.0–3.6 V supply.
• Digital Processing Modules Deploy as working memory for digital processing subsystems requiring synchronous parallel DRAM with 166 MHz clock capability.

Unique Advantages

• Mid‑density 512 Mbit capacity: Provides substantial storage in a single-chip 64M × 8 organization for systems needing moderate memory density.
• Synchronous parallel operation: SDRAM architecture with a 166 MHz clock enables synchronous memory transactions with a specified 5.4 ns access time.
• Flexible supply range: 3.0 V to 3.6 V operation supports common 3.3 V system rails.
• Compact TSOP II footprint: 54‑TSOP II package (10.16 mm width) eases PCB layout for surface-mount assembly while providing required pin count for parallel interface.
• Specified operating range: Rated for ambient operation from 0°C to 70°C, aligning with a broad set of temperature-controlled consumer and embedded applications.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S86400F-6TL is positioned for designs that require a mid-density, parallel SDRAM solution with defined timing and power characteristics. Its 64M × 8 organization, 166 MHz clock rating, and 5.4 ns access time provide deterministic SDRAM performance in a compact 54‑TSOP II package.

This device is appropriate for engineers and procurement teams specifying parallel DRAM memory that must operate from a 3.0–3.6 V supply and within an ambient range of 0°C to 70°C. It offers a clear, verifiable set of electrical and mechanical specifications for integration into systems needing 512 Mbit of volatile SDRAM.

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