IS42S86400F-7TL

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 560 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S86400F-7TL – 512 Mbit SDRAM, 54-TSOP II

The IS42S86400F-7TL is a 512 Mbit volatile SDRAM organized as 64M × 8 with a parallel memory interface. Designed for systems that require compact, synchronous dynamic RAM, it delivers predictable timing and a defined operating range for integration into board-level designs.

Key attributes include a 143 MHz clock frequency, 5.4 ns access time, a 3.0–3.6 V supply window, and a 54‑lead TSOP II package (0.400" / 10.16 mm width), making it suitable where board space and standard SDRAM interfacing are primary considerations.

Key Features

  • Memory Type Volatile SDRAM organized as 64M × 8 (512 Mbit) for use as parallel dynamic memory storage.
  • Performance Specified for operation at a 143 MHz clock frequency with a 5.4 ns access time for synchronous memory transactions.
  • Interface Parallel memory interface compatible with standard DRAM bus architectures.
  • Power Operates from a 3.0 V to 3.6 V supply range, enabling use in 3.3 V class systems.
  • Package Supplied in a 54‑TSOP II package (0.400" / 10.16 mm width) for compact board-level mounting.
  • Temperature Range Specified operating ambient temperature of 0 °C to 70 °C (TA).

Typical Applications

  • Parallel memory subsystems — Acts as system DRAM where a 64M × 8 parallel SDRAM device is required for temporary data storage.
  • Board-level memory expansion — Adds 512 Mbit of SDRAM capacity in designs that accept a 54‑TSOP II footprint and parallel interface.
  • Intermediate buffering and frame storage — Provides synchronous volatile storage for applications needing defined access timing and throughput at the specified clock frequency.

Unique Advantages

  • 512 Mbit density: Provides a 64M × 8 organization to meet moderate-capacity memory requirements without multiple devices.
  • Defined timing performance: 143 MHz clock frequency and 5.4 ns access time enable predictable SDRAM transaction timing.
  • 3.0–3.6 V supply compatibility: Matches common 3.3 V system rails for straightforward power integration.
  • Compact TSOP II package: 54‑lead TSOP (10.16 mm width) conserves board area while supporting standard surface-mount assembly.
  • Parallel interface: Straightforward integration into designs that use conventional DRAM bus signaling.

Why Choose IS42S86400F-7TL?

The IS42S86400F-7TL positions itself as a practical 512 Mbit parallel SDRAM option when predictable synchronous performance, a standard voltage domain, and a compact TSOP II package are required. Its combination of 64M × 8 organization, documented access time, and clock frequency make it suitable for designs that require clearly specified SDRAM behavior and straightforward board-level integration.

This device is suited to engineers and procurement teams seeking a discrete SDRAM component with defined electrical and mechanical attributes—offering a balance of density, timing characteristics, and a small form-factor package for system-level memory implementations.

If you need pricing or availability information, request a quote or contact sales for further assistance and to obtain lead-time details.

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