IS42S86400F-7TL
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 560 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S86400F-7TL – 512 Mbit SDRAM, 54-TSOP II
The IS42S86400F-7TL is a 512 Mbit volatile SDRAM organized as 64M × 8 with a parallel memory interface. Designed for systems that require compact, synchronous dynamic RAM, it delivers predictable timing and a defined operating range for integration into board-level designs.
Key attributes include a 143 MHz clock frequency, 5.4 ns access time, a 3.0–3.6 V supply window, and a 54‑lead TSOP II package (0.400" / 10.16 mm width), making it suitable where board space and standard SDRAM interfacing are primary considerations.
Key Features
- Memory Type Volatile SDRAM organized as 64M × 8 (512 Mbit) for use as parallel dynamic memory storage.
- Performance Specified for operation at a 143 MHz clock frequency with a 5.4 ns access time for synchronous memory transactions.
- Interface Parallel memory interface compatible with standard DRAM bus architectures.
- Power Operates from a 3.0 V to 3.6 V supply range, enabling use in 3.3 V class systems.
- Package Supplied in a 54‑TSOP II package (0.400" / 10.16 mm width) for compact board-level mounting.
- Temperature Range Specified operating ambient temperature of 0 °C to 70 °C (TA).
Typical Applications
- Parallel memory subsystems — Acts as system DRAM where a 64M × 8 parallel SDRAM device is required for temporary data storage.
- Board-level memory expansion — Adds 512 Mbit of SDRAM capacity in designs that accept a 54‑TSOP II footprint and parallel interface.
- Intermediate buffering and frame storage — Provides synchronous volatile storage for applications needing defined access timing and throughput at the specified clock frequency.
Unique Advantages
- 512 Mbit density: Provides a 64M × 8 organization to meet moderate-capacity memory requirements without multiple devices.
- Defined timing performance: 143 MHz clock frequency and 5.4 ns access time enable predictable SDRAM transaction timing.
- 3.0–3.6 V supply compatibility: Matches common 3.3 V system rails for straightforward power integration.
- Compact TSOP II package: 54‑lead TSOP (10.16 mm width) conserves board area while supporting standard surface-mount assembly.
- Parallel interface: Straightforward integration into designs that use conventional DRAM bus signaling.
Why Choose IS42S86400F-7TL?
The IS42S86400F-7TL positions itself as a practical 512 Mbit parallel SDRAM option when predictable synchronous performance, a standard voltage domain, and a compact TSOP II package are required. Its combination of 64M × 8 organization, documented access time, and clock frequency make it suitable for designs that require clearly specified SDRAM behavior and straightforward board-level integration.
This device is suited to engineers and procurement teams seeking a discrete SDRAM component with defined electrical and mechanical attributes—offering a balance of density, timing characteristics, and a small form-factor package for system-level memory implementations.
If you need pricing or availability information, request a quote or contact sales for further assistance and to obtain lead-time details.