IS42S86400F-6TLI

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 655 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S86400F-6TLI – 512 Mbit Parallel SDRAM (54‑TSOP II)

The IS42S86400F-6TLI is a volatile SDRAM device providing 512 Mbit of memory capacity organized as 64M × 8. It implements a parallel memory interface in a 54‑lead TSOP II package intended for systems that require synchronous DRAM performance and standard parallel memory connectivity.

With a clock frequency of 166 MHz, a 5.4 ns access time and a supply voltage range of 3.0 V to 3.6 V, this device targets applications that need mid‑range SDRAM performance within a compact 54‑TSOP (0.400", 10.16 mm width) footprint and an extended operating temperature range of −40 °C to 85 °C.

Key Features

  • Memory Type & Capacity 512 Mbit SDRAM organized as 64M × 8 providing standard DRAM storage in a single device.
  • Interface Parallel memory interface suitable for synchronous DRAM bus architectures.
  • Performance 166 MHz clock frequency with a 5.4 ns access time for timely data access in synchronous systems.
  • Supply Voltage Operates from 3.0 V to 3.6 V to match common SDRAM power domains.
  • Package 54‑lead TSOP II (0.400" / 10.16 mm width) package for space‑conscious board layouts and standard TSOP mounting.
  • Operating Temperature Specified for −40 °C to 85 °C ambient operation to support a wide range of temperature environments.

Typical Applications

  • Legacy parallel‑memory systems Replacement or upgrade memory for designs that use parallel SDRAM footprints and signaling.
  • Embedded systems Onboard DRAM for embedded platforms that require a 64M × 8 memory organization and compact TSOP packaging.
  • Industrial equipment Suitable for industrial applications that demand operation across −40 °C to 85 °C and standard SDRAM interfaces.

Unique Advantages

  • Standard 64M × 8 organization Simplifies memory mapping and integration into systems designed for byte‑wide SDRAM devices.
  • Synchronous parallel interface Aligns with common parallel SDRAM bus architectures for straightforward system integration.
  • Balanced performance 166 MHz clock and 5.4 ns access time deliver mid‑range SDRAM throughput appropriate for many embedded and industrial use cases.
  • Compact TSOP II package 54‑lead, 0.400" (10.16 mm) TSOP II package conserves PCB area while maintaining a standard footprint.
  • Wide operating temperature range Rated −40 °C to 85 °C to support deployments across varied ambient conditions.

Why Choose IS42S86400F-6TLI?

The IS42S86400F-6TLI is positioned for designs that require a straightforward, parallel SDRAM memory solution with a 512 Mbit capacity and a compact TSOP II footprint. Its 64M × 8 organization, 166 MHz clock specification and 5.4 ns access time provide predictable synchronous DRAM behavior for embedded and industrial system designers.

Its supply voltage range of 3.0 V to 3.6 V and −40 °C to 85 °C operating range make it suitable for applications that demand consistent electrical and thermal performance. The device is a practical choice for engineers integrating parallel SDRAM into space‑constrained PCBs and legacy parallel memory architectures.

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