IS42S86400F-7TL-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 826 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S86400F-7TL-TR – IC DRAM 512MBIT PAR 54TSOP II
The IS42S86400F-7TL-TR is a 512 Mbit SDRAM organized as 64M × 8 in a parallel DRAM format. It is supplied in a 54-TSOP II package and is designed for systems requiring synchronous DRAM memory with a parallel interface.
Key device parameters include a clock frequency of 143 MHz, an access time of 5.4 ns, an operating temperature range of 0°C to 70°C, and a supply voltage range of 3.0 V to 3.6 V, making it suitable for standard commercial-temperature, 3.x V memory applications.
Key Features
- Memory Core 512 Mbit capacity organized as 64M × 8 in SDRAM format for parallel dynamic memory storage.
- Performance Synchronous SDRAM architecture with a clock frequency of 143 MHz and an access time of 5.4 ns to support timed parallel memory operations.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Interface Parallel memory interface (DRAM) for direct mapping into parallel-memory buses.
- Package 54-TSOP II package (54-TSOP, 0.400", 10.16 mm width) intended for board-level mounting where a compact TSOP footprint is required.
- Environmental Range Commercial operating temperature range: 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion — Provides 512 Mbit parallel SDRAM capacity for systems that require synchronous dynamic memory.
- Buffer and frame storage — Parallel DRAM organization and 64M × 8 geometry suitable for temporary data buffering in designs that use parallel memory buses.
- Board-level memory integration — 54-TSOP II package enables compact placement of high-density SDRAM on PCBs with 3.0–3.6 V power rails.
Unique Advantages
- High-density 512 Mbit capacity: 64M × 8 organization provides significant volatile storage in a single device.
- Synchronous performance: 143 MHz clock rate with a 5.4 ns access time supports timed parallel SDRAM operations.
- Wide supply range: 3.0 V to 3.6 V operation accommodates common 3.x V memory power domains.
- Compact TSOP footprint: 54-TSOP II (0.400", 10.16 mm width) simplifies board layout for high-density memory designs.
- Commercial temperature rating: Specifies operation from 0°C to 70°C for standard commercial environments.
Why Choose IS42S86400F-7TL-TR?
The IS42S86400F-7TL-TR is positioned for designs that require a compact, high-density parallel SDRAM device with defined synchronous performance characteristics. Its 64M × 8 organization, 143 MHz clock capability, and 5.4 ns access time deliver predictable timing for parallel memory architectures.
This device suits customers seeking a straightforward DRAM solution in a 54-TSOP II package with a commercial temperature range and a 3.0 V–3.6 V supply window. It provides a clear specification set for board-level memory integration where volatile SDRAM capacity and compact packaging are priorities.
Request a quote or contact sales to check availability and pricing for IS42S86400F-7TL-TR and to discuss ordering options.