IS42S86400F-7TL-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 826 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S86400F-7TL-TR – IC DRAM 512MBIT PAR 54TSOP II

The IS42S86400F-7TL-TR is a 512 Mbit SDRAM organized as 64M × 8 in a parallel DRAM format. It is supplied in a 54-TSOP II package and is designed for systems requiring synchronous DRAM memory with a parallel interface.

Key device parameters include a clock frequency of 143 MHz, an access time of 5.4 ns, an operating temperature range of 0°C to 70°C, and a supply voltage range of 3.0 V to 3.6 V, making it suitable for standard commercial-temperature, 3.x V memory applications.

Key Features

  • Memory Core 512 Mbit capacity organized as 64M × 8 in SDRAM format for parallel dynamic memory storage.
  • Performance Synchronous SDRAM architecture with a clock frequency of 143 MHz and an access time of 5.4 ns to support timed parallel memory operations.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Interface Parallel memory interface (DRAM) for direct mapping into parallel-memory buses.
  • Package 54-TSOP II package (54-TSOP, 0.400", 10.16 mm width) intended for board-level mounting where a compact TSOP footprint is required.
  • Environmental Range Commercial operating temperature range: 0°C to 70°C (TA).

Typical Applications

  • Embedded memory expansion — Provides 512 Mbit parallel SDRAM capacity for systems that require synchronous dynamic memory.
  • Buffer and frame storage — Parallel DRAM organization and 64M × 8 geometry suitable for temporary data buffering in designs that use parallel memory buses.
  • Board-level memory integration — 54-TSOP II package enables compact placement of high-density SDRAM on PCBs with 3.0–3.6 V power rails.

Unique Advantages

  • High-density 512 Mbit capacity: 64M × 8 organization provides significant volatile storage in a single device.
  • Synchronous performance: 143 MHz clock rate with a 5.4 ns access time supports timed parallel SDRAM operations.
  • Wide supply range: 3.0 V to 3.6 V operation accommodates common 3.x V memory power domains.
  • Compact TSOP footprint: 54-TSOP II (0.400", 10.16 mm width) simplifies board layout for high-density memory designs.
  • Commercial temperature rating: Specifies operation from 0°C to 70°C for standard commercial environments.

Why Choose IS42S86400F-7TL-TR?

The IS42S86400F-7TL-TR is positioned for designs that require a compact, high-density parallel SDRAM device with defined synchronous performance characteristics. Its 64M × 8 organization, 143 MHz clock capability, and 5.4 ns access time deliver predictable timing for parallel memory architectures.

This device suits customers seeking a straightforward DRAM solution in a 54-TSOP II package with a commercial temperature range and a 3.0 V–3.6 V supply window. It provides a clear specification set for board-level memory integration where volatile SDRAM capacity and compact packaging are priorities.

Request a quote or contact sales to check availability and pricing for IS42S86400F-7TL-TR and to discuss ordering options.

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