IS43DR16160A-25EBL

The IS43DR16160A-25EBL is a 256 Mbit DDR2 SDRAM device organized as 16M × 16 with a parallel memory interface. It implements a double-data-rate architecture and on-chip timing features to support high-speed synchronous memory operation.

This device is intended for designs that require a 256 Mbit volatile DRAM with programmable timing options, flexible drive-strength and on-die termination, and a compact 84-ball WBGA package.

Key Features

• Core Architecture  Double data rate (DDR2) interface with 4-bit prefetch architecture and an on-chip DLL to align DQ and DQS transitions with CK.
• Memory Organization  256 Mbit density organized as 16M × 16 with 4 internal banks for concurrent operation.
• Timing & Performance  Programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5). Write latency equals read latency minus 1 tCK; programmable burst lengths of 4 or 8. Specified clock frequency: 400 MHz; write cycle time (word page) 15 ns; access time 400 ns.
• Signal & I/O  Differential data strobe (DQS / DQS¯) and JEDEC-standard 1.8 V I/O (SSTL_18-compatible). Adjustable data-output drive strength and on-die termination (ODT) supported.
• Power  Supply voltage range 1.7 V to 1.9 V for core and I/O (VDD = 1.8 V ±0.1 V, VDDQ = 1.8 V ±0.1 V).
• Package & Temperature  84-ball WBGA package (84-TWBGA, 8 mm × 12.5 mm) with an ambient operating temperature range of 0°C to 70°C (TA).
• System Reliability  Built-in features for timing alignment and drive-strength control to help optimize signal integrity in synchronous parallel memory subsystems.

Typical Applications

• Parallel memory subsystems  Used as a 256 Mbit DDR2 DRAM device in parallel memory designs that require programmable timing and ODT.
• High-speed buffering  Provides synchronous DDR2 buffering where a 16M × 16 organization and programmable burst lengths are required.
• Compact board-level implementations  Fits designs that need a small-footprint 84-ball WBGA memory package with 1.8 V supply requirements.

Unique Advantages

• Double-Data-Rate Architecture: Two data transfers per clock cycle via DDR2 and a 4-bit prefetch to maximize data throughput within the specified 400 MHz clock.
• Flexible Latency & Burst Control: Programmable CAS latencies (3–6), additive latency options, and burst lengths of 4 or 8 let designers tune performance for system timing and throughput.
• Signal Integrity Controls: Adjustable output drive strength and on-die termination (ODT) simplify board-level signal integrity management for high-speed operation.
• Compact WBGA Package: 84-ball WBGA (8 × 12.5 mm) provides a compact footprint for space-constrained designs while maintaining a 16-bit data width.
• Low-Voltage Operation: Narrow VDD/VDDQ range (1.7 V–1.9 V) aligned to 1.8 V JEDEC standards for consistent power and I/O behavior.

Why Choose IS43DR16160A-25EBL?

The IS43DR16160A-25EBL combines DDR2 double-data-rate architecture, programmable timing, and on-die signal management features in a compact 84-ball WBGA package. Its 16M × 16 organization and support for multiple CAS and additive latency settings make it suitable for designs that need configurable synchronous DRAM performance.

This device is appropriate for systems that require a 256 Mbit volatile memory element with controlled I/O characteristics, ODT support, and 1.8 V operation. The combination of timing flexibility and package density helps designers optimize board area, signal integrity, and memory timing for targeted system requirements.

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