IS43DR16160A-25EBLI

The IS43DR16160A-25EBLI is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It implements a double-data-rate architecture with on-chip DLL and a 4-bit prefetch to support high-throughput data transfers.

Designed for systems that require a compact 84-ball WBGA footprint and industry temperature operation, the device delivers programmable timing options, on-die termination and SSTL_18-compatible I/O for integration into DDR2-based memory subsystems.

Key Features

• Memory Architecture  256 Mbit DRAM organized as 16M × 16 with 4 internal banks and a 4-bit prefetch architecture for DDR2 double-data-rate transfers.
• Interface and Timing  Double data rate interface with differential data strobe (DQS/ĎQS), programmable CAS latencies (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5). Programmable burst lengths of 4 or 8.
• Signal Integrity  JEDEC-standard 1.8 V I/O (SSTL_18-compatible), adjustable data-output drive strength and on-die termination (ODT) to help manage board-level signal integrity.
• Voltage and Power  Operates at VDD / VDDQ = 1.8 V ±0.1 V (documented supply range 1.7 V – 1.9 V).
• Performance Parameters  Specified Clock Frequency 400 MHz with Access Time 400 ns and typical write cycle time (word/page) of 15 ns.
• Package  84-ball WBGA package (8.0 mm × 12.5 mm) optimized for high-density board layouts.
• Operating Temperature  Ambient operating range −40 °C to 85 °C (TA), supporting industrial-temperature applications.

Typical Applications

• Parallel DDR2 memory subsystems  Provides 256 Mbit storage in designs that require a 16-bit wide parallel DDR2 interface and configurable latency/burst behavior.
• High-speed data buffering  DDR2 double-data-rate transfers, on-chip DLL and four internal banks support high-throughput transient buffering.
• Industrial embedded systems  Rated for −40 °C to 85 °C ambient operation, suitable for embedded systems that need industrial temperature memory components.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency and additive latency options let designers tune performance versus timing constraints.
• SSTL_18-compatible I/O and ODT: JEDEC 1.8 V I/O, on-die termination and adjustable drive strength simplify signal integrity management on high-speed boards.
• Compact WBGA footprint: 84-ball WBGA (8.0 mm × 12.5 mm) supports high-density PCB designs while providing a standard package for automated assembly.
• Low-voltage DDR2 operation: 1.8 V nominal supply (1.7 V–1.9 V documented range) reduces system power compared with higher-voltage memory options.
• Concurrency and throughput: Four internal banks and 4n prefetch architecture support overlapping operations and efficient data transfers.

Why Choose IS43DR16160A-25EBLI?

The IS43DR16160A-25EBLI positions itself as a configurable 256 Mbit DDR2 memory device combining DDR2 double-data-rate architecture, programmable timing, on-die termination and SSTL_18-compatible I/O in an 84-ball WBGA package. Its documented supply range, timing parameters and industrial ambient rating make it suitable for designs that require predictable DDR2 behavior and compact assembly.

This device is appropriate for engineers building parallel DDR2 memory subsystems, high-speed buffers or embedded systems that need a 16-bit wide DDR2 component with flexible latency, burst and drive-strength settings. The documented electrical and timing parameters enable straightforward integration and validation in regulated design flows.

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