IS43DR16160A-37CBL

The IS43DR16160A-37CBL is a 256Mbit DDR2 SDRAM organized as 16M x 16 with a parallel interface and an 84-ball WBGA package. It implements a double-data-rate architecture with on-chip DLL and 4-bit prefetch to support high-speed memory transfers for systems requiring low-voltage DDR2 operation.

Typical system-level benefits include JEDEC-standard 1.8V I/O compatibility, selectable timing parameters, and on-die termination and drive-strength options for signal-integrity tuning in compact board designs.

Key Features

• Memory Core and Organization 256 Mbit DDR2 SDRAM organized as 16M × 16 with 4 internal banks and 4-bit prefetch architecture for double-data-rate transfers.
• Interface and Timing Double data rate interface with differential data strobe (DQS/ !DQS), programmable CAS latency (CL = 3, 4, 5, 6), posted CAS and programmable additive latency (AL = 0–5), and programmable burst lengths of 4 or 8.
• Voltage and Signaling VDD/VDDQ = 1.8 V ±0.1 V (product spec lists operating supply range 1.7 V–1.9 V) and JEDEC-standard 1.8V I/O (SSTL_18-compatible).
• On-Chip Circuitry On-chip DLL to align DQ and DQS transitions with CK, adjustable data-output drive strength, and on-die termination (ODT) for improved signal integrity.
• Performance Parameters Specified clock frequency up to 266 MHz (product data), access time 500 ps, and write cycle time (word page) 15 ns to support responsive read/write operations.
• Package and Temperature 84-ball WBGA package (8 mm × 12.5 mm) with an ambient operating temperature range of 0°C to 70°C (TA).

Unique Advantages

• Double-data-rate throughput: Transfers two data words per clock cycle via DDR2 architecture and differential DQS for higher effective bandwidth at a given clock rate.
• Flexible timing and latency control: Programmable CAS latencies (CL = 3–6) and additive latency options allow system tuning for different performance and timing budgets.
• Signal-integrity options: On-die termination and selectable drive strength help manage board-level signal integrity without additional external components.
• Low-voltage operation: 1.7 V–1.9 V supply range aligns with 1.8 V DDR2 system rails to reduce power compared with higher-voltage memories.
• Compact WBGA footprint: 84-ball WBGA (8 mm × 12.5 mm) provides a dense package option for space-constrained PCB layouts.

Why Choose IS43DR16160A-37CBL?

The IS43DR16160A-37CBL delivers a standards-based DDR2 memory solution with programmable timing, on-chip DLL, ODT and drive-strength options that make it suitable for designs requiring tunable performance and signal integrity within a compact 84-ball WBGA package. Its 16M × 16 organization and DDR2 interface support common memory configurations while operating at 1.8 V supply levels.

This part is appropriate for designers who need a 256 Mbit parallel DDR2 device with selectable latency and burst options, and who require package density and standard 1.8 V signaling for system integration and timing optimization.

Request a quote or submit an inquiry to discuss pricing, availability, and volume requirements for the IS43DR16160A-37CBL.