IS43DR16160A-25EBL-TR

The IS43DR16160A-25EBL-TR is a 256 Mbit DDR2 SDRAM organized as 16M × 16 in an 84-ball WBGA package. It implements a double-data-rate architecture with a parallel interface and is supplied in a compact 84-TWBGA (8 mm × 12.5 mm) footprint.

Designed for board-level applications that require a 256 Mbit DDR2 memory device, the part delivers DDR2-specific features such as differential data strobes, on-die termination and a 1.8 V I/O interface while operating from a low-voltage 1.7 V–1.9 V supply range.

Key Features

• Memory Core  256 Mbit DDR2 SDRAM organized as 16M × 16 with four internal banks for concurrent operation.
• Double-Data-Rate Interface  DDR2 architecture provides two data transfers per clock cycle and supports differential data strobe signals (DQS /DQS).
• Prefetch and DLL  4-bit prefetch architecture with an on-chip DLL to align DQ and DQS transitions with CK.
• Programmable Timing  Programmable CAS latency (CL = 3, 4, 5, 6), programmable additive latency (AL = 0–5), and programmable burst lengths (4 or 8).
• Signal Integrity  On-die termination (ODT) and adjustable data-output drive strength options improve interface signal behavior.
• Power  VDD and VDDQ typical operating range 1.7 V – 1.9 V with JEDEC-standard 1.8 V I/O (SSTL_18-compatible).
• Performance  Specified clock frequency 400 MHz and documented key timing parameters including tRCD, tRP, tRAS and tRC; access time listed as 400 ns and write cycle time (word page) 15 ns.
• Package & Temperature  Supplied in an 84-TWBGA (8 mm × 12.5 mm) package; ambient operating temperature range 0°C to 70°C (TA).

Typical Applications

• Embedded board memory  Use as parallel DDR2 DRAM where a 256 Mbit density and 16M × 16 organization are required on compact PCBs.
• Consumer device memory  Provides DDR2 SDRAM storage in space-constrained consumer electronics that accept 1.8 V I/O signalling.
• Networking and communications modules  Suitable for modules needing parallel DDR2 memory with programmable latencies and on-die termination for signal integrity.

Unique Advantages

• Low-voltage operation: Operates from 1.7 V–1.9 V supply rails with JEDEC 1.8 V I/O compatibility, reducing system power overhead where 1.8 V domains are used.
• DDR2 double-data-rate throughput: Two data transfers per clock cycle and differential DQS support improve effective data bandwidth on parallel interfaces.
• Flexible timing configuration: Programmable CAS and additive latencies plus selectable burst lengths allow designers to tune performance versus timing for system requirements.
• Integrated signal conditioning: On-die termination and on-chip DLL help align signals and reduce board-level termination complexity.
• Compact WBGA package: 84-TWBGA (8 mm × 12.5 mm) provides a small footprint for dense board layouts.
• Documented timing and operating limits: Key timing parameters and operating ranges are provided for deterministic system design and validation.

Why Choose IS43DR16160A-25EBL-TR?

The IS43DR16160A-25EBL-TR positions itself as a compact, low-voltage DDR2 SDRAM option for designs that require 256 Mbit of parallel memory in a small WBGA package. Its DDR2 feature set—including differential DQS, on-die termination, programmable latencies and a 4-bit prefetch architecture—supports flexible performance tuning and reliable interface timing on 1.8 V I/O systems.

This device is suited to engineers designing board-level memory subsystems who need a documented DDR2 solution with explicit timing, supply and thermal parameters. The provided datasheet details enable deterministic integration, validation and long-term maintenance of memory subsystems.

Request a quote or submit an inquiry for availability, lead times and volume pricing for the IS43DR16160A-25EBL-TR.