IS42VS16160J-75TLI

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,046 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42VS16160J-75TLI – IC DRAM 256Mbit PAR 54TSOP II

The IS42VS16160J-75TLI is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It implements SDRAM architecture optimized for systems requiring fast, synchronous volatile storage.

With a 133 MHz clock rating, 5.4 ns access time, and a compact 54‑TSOP II package, this device targets designs that need moderate-density parallel SDRAM in a small footprint and across an extended operating temperature range.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 16M × 16 providing parallel data width suited for 16‑bit memory buses.
  • Performance 133 MHz clock frequency and 5.4 ns access time for synchronous DRAM operation and predictable timing.
  • Power Low-voltage operation with a supply range of 1.7 V to 1.9 V to match low-voltage system rails.
  • Package 54‑TSOP II package (0.400" / 10.16 mm width) for compact board-level integration.
  • Interface Parallel memory interface for direct connection to parallel memory controllers and buses.
  • Operating Range Industrial operating temperature from −40°C to 85°C (TA), suitable for temperature‑varied environments.

Typical Applications

  • Embedded memory expansion — Provides 256 Mbit of synchronous volatile storage for systems requiring parallel SDRAM capacity and predictable timing.
  • Buffering and working memory — Suitable for applications that need 16‑bit parallel SDRAM for temporary data storage and buffering at up to 133 MHz clock rates.
  • Compact board designs — The 54‑TSOP II package enables integration of 256 Mbit SDRAM where board space is constrained.

Unique Advantages

  • Parallel 16‑bit organization: 16M × 16 arrangement simplifies integration with 16‑bit memory buses and controllers.
  • Predictable synchronous performance: 133 MHz clock rating and 5.4 ns access time deliver deterministic SDRAM timing characteristics.
  • Low‑voltage operation: 1.7 V to 1.9 V supply range supports low-voltage system architectures and helps reduce overall power consumption.
  • Compact TSOP II footprint: 54‑lead TSOP (0.400", 10.16 mm width) balances capacity with small package dimensions for space‑sensitive designs.
  • Extended temperature range: −40°C to 85°C operating range supports deployment in temperature‑varied environments.
  • Industry manufacturer: Produced by Integrated Silicon Solution Inc., providing a recognized source for SDRAM devices.

Why Choose IS42VS16160J-75TLI?

The IS42VS16160J-75TLI combines a 256 Mbit SDRAM capacity with a 16‑bit organization, synchronous operation at 133 MHz, and a compact 54‑TSOP II package—making it well suited for designs that require moderate-density parallel volatile memory with predictable timing. Its low-voltage supply range and extended −40°C to 85°C operating window provide flexibility for a range of system environments.

This device is appropriate for engineers specifying parallel SDRAM where board space, power rails, and thermal conditions are key considerations, and where a straightforward 16‑bit SDRAM device is needed from a known manufacturer.

Request a quote or submit an inquiry to obtain pricing and availability for the IS42VS16160J-75TLI.

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