IS42S86400F-7TLI-TR

The IS42S86400F-7TLI-TR from Integrated Silicon Solution Inc (ISSI) is a 512 Mbit synchronous DRAM (SDRAM) device organized as 64M × 8 with a parallel memory interface. It delivers system memory and buffering capability in a compact 54-TSOP II package suitable for designs that require moderate-capacity volatile memory with defined timing and power characteristics.

Key attributes include a 143 MHz clock rate, 5.4 ns access time, 3.0 V–3.6 V supply range and extended operating temperature from −40°C to 85°C, making the device appropriate for embedded and industrial applications where temperature range, interface simplicity and compact package size are important.

Key Features

• Memory Type & Organization 512 Mbit SDRAM organized as 64M × 8, providing byte-wide data access in a parallel memory format.
• Interface Parallel memory interface for conventional SDRAM system integration.
• Performance 143 MHz clock frequency and a 5.4 ns access time that define read/write timing characteristics for system designers.
• Voltage Supply Operates from 3.0 V to 3.6 V, supporting systems with standard 3 V-class power rails.
• Package 54-TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level mounting.
• Operating Temperature Rated for −40°C to 85°C (TA), supporting extended temperature applications.
• Memory Format & Mounting Volatile DRAM memory format intended for standard soldered PCB mounting in TSOP II footprint.

Typical Applications

• Embedded Systems Provides parallel SDRAM capacity for firmware and runtime data storage in space-constrained embedded designs.
• Buffering and Frame Storage Serves as frame buffers or intermediate data buffers where 512 Mbit of volatile memory and defined access times are required.
• Industrial Control Suitable for industrial electronics requiring a 3.0 V–3.6 V memory solution that operates across −40°C to 85°C.

Unique Advantages

• Compact TSOP II footprint: 54-TSOP (0.400", 10.16 mm) package enables dense board layouts while maintaining standard solder mounting.
• Defined timing performance: 143 MHz clock and 5.4 ns access time allow predictable memory timing for system-level design and verification.
• Wide operating temperature: −40°C to 85°C rating supports applications that require extended temperature operation.
• Standard 3 V-class supply: 3.0 V–3.6 V supply range aligns with common system power rails to simplify power design.
• Byte-wide organization: 64M × 8 arrangement provides straightforward data width mapping for parallel memory interfaces.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S86400F-7TLI-TR positions itself as a practical SDRAM option for designers needing a 512 Mbit, parallel-interface DRAM in a compact TSOP II package with defined timing (143 MHz clock, 5.4 ns access) and an industry-standard 3.0 V–3.6 V supply range. Its −40°C to 85°C operating range and 64M × 8 organization make it suitable for embedded and industrial applications where predictable performance and compact mounting are priorities.

This device is well suited to design teams seeking straightforward integration of volatile system memory for buffering, frame storage or general-purpose runtime storage, offering verifiable electrical and mechanical characteristics for reliable board-level implementation.

Request a quote or submit an inquiry to sales for pricing and availability of the IS42S86400F-7TLI-TR.