IS42S86400F-6TLI-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 1,130 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S86400F-6TLI-TR – 512Mbit SDRAM, Parallel, 54-TSOP II

The IS42S86400F-6TLI-TR is a 512 Mbit volatile SDRAM organized as 64M × 8 with a parallel memory interface. It operates with a 3.0 V to 3.6 V supply and supports a clock frequency of 166 MHz with an access time of 5.4 ns.

Packaged in a 54-TSOP II (0.400", 10.16 mm width) form factor and specified for operation from −40°C to 85°C, this device is suited for designs that require mid-density parallel SDRAM memory in a compact TSOP package.

Key Features

  • Memory Core SDRAM volatile memory technology providing synchronous dynamic RAM operation for parallel-interface systems.
  • Density & Organization 512 Mbit capacity organized as 64M × 8, delivering half-gigabit storage in a single device.
  • Performance Supports a clock frequency of 166 MHz and an access time of 5.4 ns for timed read/write operations.
  • Voltage & Power Operates from 3.0 V to 3.6 V supply voltage, compatible with standard 3.3 V system rails.
  • Interface Parallel memory interface suited for systems that use parallel SDRAM connectivity.
  • Package & Mounting Available in a 54-TSOP II (0.400", 10.16 mm width) package for surface-mount applications.
  • Operating Range Specified for ambient operation from −40°C to 85°C (TA), enabling deployment across a broad temperature window.

Typical Applications

  • Embedded memory subsystems — Provides a 512 Mbit parallel SDRAM option for systems requiring mid-density volatile storage.
  • Industrial electronics — Suitable for designs that need SDRAM operation across an extended temperature range (−40°C to 85°C).
  • Board-level memory expansion — Fits compact board layouts where a 54-TSOP II package is required for surface-mount mounting.

Unique Advantages

  • High-density storage: 512 Mbit capacity (64M × 8) consolidates significant memory in a single device footprint.
  • Synchronous performance: 166 MHz clock rating with 5.4 ns access time supports timed SDRAM operation demands.
  • Standard 3.3 V compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.
  • Compact TSOP II package: 54-TSOP (0.400", 10.16 mm width) packaging for space-efficient surface-mount implementations.
  • Wide ambient temperature: −40°C to 85°C operating range for deployment in varied thermal environments.

Why Choose IS42S86400F-6TLI-TR?

The IS42S86400F-6TLI-TR offers a straightforward, specification-driven solution for designs that require a 512 Mbit parallel SDRAM with defined timing and voltage characteristics. Its combination of 64M × 8 organization, 166 MHz clock capability, and a 54-TSOP II package makes it appropriate for board-level memory implementations where mid-density volatile storage and compact packaging are priorities.

This device suits engineers and procurement teams targeting systems that need predictable SDRAM performance, standard 3.3 V supply compatibility, and operation across −40°C to 85°C. It provides a clear, verifiable specification set for integration into parallel-interface memory subsystems.

Request a quote or contact sales to discuss availability and pricing for the IS42S86400F-6TLI-TR. Provide your quantity and lead-time requirements to receive a tailored response.

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