IS42S86400F-6TLI-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,130 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S86400F-6TLI-TR – 512Mbit SDRAM, Parallel, 54-TSOP II
The IS42S86400F-6TLI-TR is a 512 Mbit volatile SDRAM organized as 64M × 8 with a parallel memory interface. It operates with a 3.0 V to 3.6 V supply and supports a clock frequency of 166 MHz with an access time of 5.4 ns.
Packaged in a 54-TSOP II (0.400", 10.16 mm width) form factor and specified for operation from −40°C to 85°C, this device is suited for designs that require mid-density parallel SDRAM memory in a compact TSOP package.
Key Features
- Memory Core SDRAM volatile memory technology providing synchronous dynamic RAM operation for parallel-interface systems.
- Density & Organization 512 Mbit capacity organized as 64M × 8, delivering half-gigabit storage in a single device.
- Performance Supports a clock frequency of 166 MHz and an access time of 5.4 ns for timed read/write operations.
- Voltage & Power Operates from 3.0 V to 3.6 V supply voltage, compatible with standard 3.3 V system rails.
- Interface Parallel memory interface suited for systems that use parallel SDRAM connectivity.
- Package & Mounting Available in a 54-TSOP II (0.400", 10.16 mm width) package for surface-mount applications.
- Operating Range Specified for ambient operation from −40°C to 85°C (TA), enabling deployment across a broad temperature window.
Typical Applications
- Embedded memory subsystems — Provides a 512 Mbit parallel SDRAM option for systems requiring mid-density volatile storage.
- Industrial electronics — Suitable for designs that need SDRAM operation across an extended temperature range (−40°C to 85°C).
- Board-level memory expansion — Fits compact board layouts where a 54-TSOP II package is required for surface-mount mounting.
Unique Advantages
- High-density storage: 512 Mbit capacity (64M × 8) consolidates significant memory in a single device footprint.
- Synchronous performance: 166 MHz clock rating with 5.4 ns access time supports timed SDRAM operation demands.
- Standard 3.3 V compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.
- Compact TSOP II package: 54-TSOP (0.400", 10.16 mm width) packaging for space-efficient surface-mount implementations.
- Wide ambient temperature: −40°C to 85°C operating range for deployment in varied thermal environments.
Why Choose IS42S86400F-6TLI-TR?
The IS42S86400F-6TLI-TR offers a straightforward, specification-driven solution for designs that require a 512 Mbit parallel SDRAM with defined timing and voltage characteristics. Its combination of 64M × 8 organization, 166 MHz clock capability, and a 54-TSOP II package makes it appropriate for board-level memory implementations where mid-density volatile storage and compact packaging are priorities.
This device suits engineers and procurement teams targeting systems that need predictable SDRAM performance, standard 3.3 V supply compatibility, and operation across −40°C to 85°C. It provides a clear, verifiable specification set for integration into parallel-interface memory subsystems.
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