IS42S86400F-6TL-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,742 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S86400F-6TL-TR – 512 Mbit SDRAM, Parallel, 54‑TSOP II
The IS42S86400F-6TL-TR is a 512 Mbit volatile SDRAM organized as 64M × 8 with a parallel memory interface. It is supplied in a 54‑TSOP II package and operates from 3.0 V to 3.6 V with an ambient operating temperature range of 0°C to 70°C.
Key performance characteristics include a 166 MHz clock frequency and a 5.4 ns access time, providing a balance of capacity and access performance for designs that require parallel SDRAM memory in a compact TSOP footprint.
Key Features
- Memory Core 512 Mbit DRAM organized as 64M × 8 using SDRAM technology for volatile data storage.
- Performance 166 MHz clock frequency and 5.4 ns access time to support responsive memory operations.
- Interface Parallel memory interface (PAR) suitable for systems designed to use parallel DRAM modules.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 54‑TSOP (0.400", 10.16 mm width) — Supplier device package: 54‑TSOP II — designed for compact board integration.
- Operating Conditions Ambient temperature range of 0°C to 70°C (TA).
- Memory Format DRAM volatile memory format, suitable for designs requiring temporary high-density storage.
Unique Advantages
- High-density 512 Mbit capacity: Provides substantial volatile storage in a single 64M × 8 device for space-constrained designs.
- Measured access performance: 166 MHz clocking and 5.4 ns access time enable timely data retrieval for parallel-memory architectures.
- Standard supply compatibility: 3.0 V–3.6 V operation aligns with common memory power rails to simplify power supply planning.
- Compact TSOP II packaging: 54‑TSOP (0.400", 10.16 mm) supports dense PCB layouts while maintaining a standardized package footprint.
- Clear operating range: 0°C to 70°C ambient rating provides defined thermal operating limits for system qualification.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The IS42S86400F-6TL-TR combines 512 Mbit SDRAM density, 166 MHz clocking, and a compact 54‑TSOP II package to address designs that require parallel volatile memory with concrete electrical and mechanical specifications. Its 3.0 V–3.6 V supply range and defined 0°C–70°C operating window make it suitable for projects with standard board-level thermal and power constraints.
Choose this device when you need verified SDRAM capacity and access characteristics in a TSOP II form factor, with clear parameters for integration and system-level planning.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S86400F-6TL-TR.
