IS42S86400D-7TLI

The IS42S86400D-7TLI is a 512 Mbit synchronous DRAM organized as 64M × 8, implementing a pipelined architecture for high-speed parallel memory access. It is a fully synchronous device with all signals referenced to the rising edge of the clock and is offered in a 54-pin TSOP-II package.

This device targets systems requiring a parallel SDRAM interface with programmable burst operation, selectable CAS latency, and standard refresh modes, operating from 3.0 V to 3.6 V and specified for −40°C to +85°C ambient.

Key Features

• Memory Type & Organization — 512 Mbit SDRAM organized as 64M × 8 with internal bank architecture (4 banks) for hidden row access/precharge and pipelined operation.
• Clock & Timing — Specified for a 143 MHz clock (–7 speed grade) with access time from clock as low as 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (Sequential or Interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh & Self-Refresh — Auto refresh (CBR) and self-refresh supported with 8K refresh cycles every 64 ms (commercial/industrial) as specified.
• Interface & Logic Levels — LVTTL-compatible interface with random column addressing capability every clock cycle.
• Power — Operating supply range listed as 3.0 V to 3.6 V for this device variant.
• Package — 54-pin TSOP-II (0.400", 10.16 mm width) supply option for x8 devices.
• Operating Temperature — Specified ambient range −40°C to +85°C.

Unique Advantages

• Synchronous pipelined architecture: All I/O referenced to the rising clock edge supports deterministic timing and simplified system timing analysis.
• Flexible burst modes: Programmable burst lengths and sequences enable optimization of throughput for varied access patterns.
• Selectable CAS latency: CAS latency options (2 or 3) allow tuning between latency and clock-frequency targets.
• Standard refresh support: Auto and self-refresh modes with specified 8K/64 ms refresh cycles help maintain data integrity across operating conditions.
• Industrial temperature rating: Specified for −40°C to +85°C ambient to support deployments requiring extended temperature range.
• Compact TSOP-II package: 54-pin TSOP-II (10.16 mm width) provides a standard footprint for x8 SDRAM in space-constrained board designs.

Why Choose IS42S86400D-7TLI?

The IS42S86400D-7TLI offers a 512 Mbit, fully synchronous SDRAM solution with programmable burst control, selectable CAS latency, and standard refresh modes, delivering predictable high-speed parallel memory behavior. Its operating voltage range and industrial temperature rating make it suitable for designs that require stable SDRAM performance across a wide range of conditions.

This device is appropriate for engineers specifying parallel SDRAM with a 54-pin TSOP-II footprint who need configurable burst and timing options along with self-refresh and auto-refresh capabilities for reliable data retention. The combination of timing parameters, interface compatibility, and package availability supports straightforward integration into systems using parallel SDRAM memory.

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