IS42S86400D-6TLI-TR

The IS42S86400D-6TLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 64M × 8 with a parallel memory interface. It uses a pipelined, fully synchronous architecture to deliver high-speed data transfer and timing predictability for designs that require 512 Mbit of DRAM storage.

This device targets applications that need deterministic SDRAM performance with programmable burst and refresh features, offered in a compact 54-pin TSOP-II package and rated for industrial temperature operation.

Key Features

• Core / Memory: 512 Mbit SDRAM organized as 64M × 8, implemented with fully synchronous pipeline architecture for predictable timing referenced to the rising clock edge.
• Performance: Clock frequency rated at 166 MHz with access time of 5.4 ns (CAS latency -6 speed grade), and programmable CAS latency options (2 or 3 clocks) for timing flexibility.
• Burst and Sequencing: Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave), supporting burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Power Management: Auto Refresh and Self Refresh supported, with 8K refresh cycles every 64 ms to maintain data integrity during operation and low-power states.
• Interface: Parallel memory interface with LVTTL signaling for input/output; random column address is available every clock cycle for efficient column access.
• Power: Power supply range specified at 3.0 V to 3.6 V.
• Package & Temperature: 54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range −40°C to +85°C (TA).

Typical Applications

• Embedded system memory: Acts as main or external system memory where a synchronous, parallel 512 Mbit SDRAM is required for deterministic access and burst transfers.
• High-speed buffering: Provides buffer storage for data streams that benefit from programmable burst lengths and fast access timing.
• Industrial equipment: Suited for systems requiring wide temperature operation (−40°C to +85°C) while maintaining SDRAM refresh and self-refresh capabilities.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous design with all signals referenced to the rising clock edge simplifies timing and integration into clocked systems.
• Speed-grade matched performance: The -6 speed grade delivers 166 MHz clock operation and 5.4 ns access time for responsive memory access.
• Flexible burst control: Programmable burst lengths and sequences enable optimization of throughput for different access patterns.
• Robust refresh handling: Auto and self-refresh modes with 8K refresh cycles per 64 ms ensure data retention across operating modes.
• Compact industrial package: 54-pin TSOP-II provides a space-efficient footprint while supporting industrial temperature range for reliable field deployment.
• Wide VDD range: Operates from 3.0 V to 3.6 V, accommodating common 3.3 V power rails in system designs.

Why Choose IS42S86400D-6TLI-TR?

The IS42S86400D-6TLI-TR combines a 512 Mbit SDRAM density with a fully synchronous, pipelined architecture to deliver predictable high-speed memory operation in a compact 54-pin TSOP-II package. Its programmable burst features, selectable CAS latency, and standard refresh mechanisms make it suitable for designs that require configurable throughput and reliable data retention.

Manufactured by Integrated Silicon Solution, Inc. (ISSI), this device is documented with detailed timing, refresh and package information to support integration into systems that need a parallel 512 Mbit SDRAM solution across a broad operating temperature range.

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