IS42S86400D-6TL

The IS42S86400D-6TL is a 512 Mbit synchronous DRAM device organized as 64M × 8 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal banking to support high-speed burst transfers and predictable timing for systems that require parallel SDRAM storage.

Designed for commercial-temperature applications, this device targets embedded and system designs that require expandable, low-latency volatile memory in a compact 54-pin TSOP-II package.

Key Features

• Memory Organization: 512 Mbit arranged as 64M × 8, providing a parallel x8 data path for standard SDRAM interfacing.
• SDRAM Core: Fully synchronous SDRAM with internal banks and pipeline architecture to support burst read/write operations and predictable timing referenced to the rising clock edge.
• Performance: Clock frequency up to 166 MHz (part -6); access time listed at 5.4 ns for the -6 speed grade, supporting low-latency memory access.
• Programmable Burst & Timing: Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks for timing flexibility.
• Refresh & Self-Management: Auto Refresh and Self Refresh support with 8K refresh cycles per 64 ms, enabling reliable dynamic data retention.
• Interface & I/O: LVTTL-compatible interface and parallel memory signaling for compatibility with standard SDRAM controllers.
• Power: Supply voltage range specified as 3.0 V to 3.6 V for this part number.
• Package: 54-pin TSOP-II (0.400", 10.16 mm width) — compact surface-mount package for space-constrained PCBs.
• Operating Temperature: Commercial temperature range of 0°C to +70°C (TA).

Typical Applications

• Embedded Systems: Expand volatile system memory where parallel SDRAM is required for code or data buffering in embedded controllers.
• Consumer Electronics: Use as system DRAM in devices that employ parallel memory interfaces and require compact package options.
• Networking & Communications Equipment: Buffering and packet storage in designs that need predictable SDRAM timing and burst transfers.

Unique Advantages

• Flexible Timing Configuration: Programmable CAS latency and multiple burst length options let designers tune performance to system timing requirements.
• High-Speed Parallel Access: 166 MHz clock rating and 5.4 ns access time (‑6 speed grade) enable responsive memory transactions for latency-sensitive tasks.
• Compact, Standard Package: 54-pin TSOP-II minimizes board area while providing a standard footprint for parallel SDRAM integration.
• Robust Refresh Mechanisms: Auto Refresh and Self Refresh with defined refresh cycles (8K/64 ms) reduce the burden on system refresh management.
• LVTTL Interface Compatibility: Standard LVTTL signaling simplifies interfacing with common SDRAM controllers and logic families.

Why Choose IS42S86400D-6TL?

The IS42S86400D-6TL offers a balanced combination of performance, configurability, and compact packaging for designers needing a 512 Mbit parallel SDRAM solution. Its fully synchronous architecture, programmable timing options, and support for burst operations make it a practical choice for embedded and system-level memory expansion where predictable latency and efficient burst transfers are important.

This device is suitable for commercial-temperature designs that require a 3.0–3.6 V supply and a standard 54-pin TSOP-II footprint, providing straightforward integration into existing parallel SDRAM memory architectures.

Request a quote or contact sales for pricing, lead time, and availability for IS42S86400D-6TL.