IS42S86400B-7TLI-TR

The IS42S86400B-7TLI-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 64M × 8 with a parallel memory interface in a 54-pin TSOP-II package. It uses a pipelined, fully synchronous architecture with internal banks to improve row access and precharge efficiency.

This device is specified for operation from -40°C to +85°C (TA), supports programmable burst and CAS latency settings, and is intended for memory subsystems that require 512 Mbit density with flexible timing and refresh control.

Key Features

• Core & Architecture  Quad-bank synchronous DRAM organized as 64M × 8; fully synchronous operation with inputs and outputs referenced to the rising clock edge.
• Memory Capacity & Organization  512 Mbit total memory configured as 64M × 8 for compact high-density memory arrays.
• Performance  Supports clock frequencies of 166, 143 and 133 MHz with an access time from clock of 5.4 ns (CL = 3) and documented timing for CL = 2 and CL = 3.
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
• Power  Voltage supply range listed as 3.0 V to 3.6 V; datasheet references operation in 3.3 V VDD and VDDQ memory systems.
• Interface  Parallel memory interface with LVTTL signaling for command and control.
• Package  Available in a 54-pin TSOP-II package (0.400", 10.16 mm width) for surface-mount board designs.
• Refresh & Reliability  Supports Auto Refresh (CBR) and Self Refresh. Refresh options include 8K cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade).
• Operating Temperature  Specified operating temperature range: -40°C to +85°C (TA).

Unique Advantages

• Deterministic synchronous timing: Precise, clock-referenced operation and programmable CAS latency (2 or 3) enable matched timing behavior for synchronous memory subsystems.
• Flexible burst operation: Selectable burst lengths and sequences (sequential/interleave) provide granular control over read/write transfer patterns.
• Compact package density: 512 Mbit capacity in a 54-pin TSOP-II package delivers high density for space-constrained board layouts.
• Robust refresh options: Auto and Self Refresh support plus multiple refresh-cycle timing options accommodate different system refresh budgets and grades.
• Wide operating range: Specified for -40°C to +85°C operation, suitable for designs that require extended temperature capability.

Why Choose IS42S86400B-7TLI-TR?

The IS42S86400B-7TLI-TR combines 512 Mbit SDRAM density with synchronous, pipelined architecture and programmable timing to deliver predictable performance in parallel memory subsystems. Its 54-pin TSOP-II package and supported clock rates (including 143 MHz) make it suitable for designs that need compact, high-density volatile memory with flexible burst and refresh controls.

This device is appropriate for engineers and procurement teams specifying a 64M × 8 SDRAM component where documented timing, supply range, refresh options, and an industrial temperature rating are required for reliable system integration.

Request a quote or submit an RFQ for IS42S86400B-7TLI-TR to check availability and pricing for your design and production needs.