IS42S83200L-7TLI-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,100 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization32M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S83200L-7TLI-TR – 256 Mbit SDRAM, 32M × 8, 54‑TSOP II

The IS42S83200L-7TLI-TR is a 256 Mbit volatile memory device implemented as SDRAM with a 32M × 8 organization. It provides synchronous DRAM storage with a documented clock frequency of 143 MHz and an access time of 5.4 ns.

Engineered for systems that require off-chip parallel SDRAM capacity and standard LVTTL signaling, this device combines mid-range speed and a compact 54‑TSOP II package with a 3.0–3.6 V supply and industrial temperature range.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 32M × 8 for straightforward byte-wide external memory integration.
  • Performance  Supports a clock frequency of 143 MHz with an access time of 5.4 ns to meet mid-range synchronous memory timing requirements.
  • Interface  LVTTL memory interface for compatibility with standard logic-level designs.
  • Power  Nominal supply range of 3.0 V to 3.6 V to match common 3 V SDRAM power rails.
  • Package  54‑TSOP II (0.400", 10.16 mm width) package case suitable for space-constrained board layouts.
  • Operating Temperature  Rated for −40 °C to 85 °C (TA), enabling use across a broad industrial temperature range.

Typical Applications

  • Embedded Systems  External SDRAM capacity for microcontroller- or FPGA-based platforms requiring 256 Mbit storage.
  • Consumer Electronics  Byte-wide SDRAM for devices that need synchronous external memory with LVTTL signaling.
  • Industrial Equipment  Systems operating in −40 °C to 85 °C environments that require off-chip SDRAM in a compact TSOP II package.

Unique Advantages

  • Verified SDRAM Organization: 32M × 8 arrangement simplifies system memory mapping and byte-wide data paths.
  • Documented Performance: 143 MHz clock and 5.4 ns access time provide defined timing characteristics for design validation.
  • Standard LVTTL Interface: Facilitates integration with common digital logic families without voltage-level translation.
  • Wide Operating Voltage: 3.0–3.6 V supply range aligns with common 3 V system power rails.
  • Compact, Industry-Standard Package: 54‑TSOP II footprint supports dense PCB assembly and established assembly workflows.
  • Extended Temperature Rating: −40 °C to 85 °C rating supports deployment in a broad set of environmental conditions.

Why Choose IS42S83200L-7TLI-TR?

The IS42S83200L-7TLI-TR positions itself as a straightforward 256 Mbit SDRAM option for designs that need documented synchronous performance, a standard LVTTL interface, and a compact 54‑TSOP II package. Its 32M × 8 organization and defined timing figures make it suitable for engineers specifying off-chip DRAM with predictable electrical and timing characteristics.

Built by Integrated Silicon Solution Inc (ISSI) and specified across a broad temperature and supply range, this device is appropriate for applications that require mid-range SDRAM capacity in space-constrained board layouts while maintaining standard signal and power interfaces.

Request a quote or contact sales to discuss availability, lead times, and pricing for IS42S83200L-7TLI-TR.

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