IS42S83200L-7TLI

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 598 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization32M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S83200L-7TLI – 256Mbit SDRAM, 54-TSOP II

The IS42S83200L-7TLI from ISSI is a 256 Mbit volatile DRAM organized as 32M × 8 using SDRAM architecture. It provides synchronous dynamic memory storage with an LVTTL memory interface and support for a system clock frequency of 143 MHz.

This device targets designs that require mid-density SDRAM in a compact 54‑TSOP II package, offering a defined operating voltage range and industrial temperature support for a variety of electronic applications.

Key Features

  • Memory Type / Architecture 256 Mbit DRAM organized as 32M × 8 using SDRAM technology for synchronous access.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns to meet timing requirements for synchronous memory subsystems.
  • Interface LVTTL memory interface for standard logic-level connectivity.
  • Power Nominal supply voltage range of 3.0 V to 3.6 V, suitable for 3 V system rails.
  • Package 54‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level integration.
  • Operating Temperature Specified for −40 °C to 85 °C (TA) to support extended temperature environments.

Typical Applications

  • Embedded memory subsystems — Provides 256 Mbit SDRAM capacity for systems requiring synchronous DRAM in a compact footprint.
  • Board-level expansion — Used where a 32M × 8 SDRAM organization and LVTTL interface are required for external memory expansion.
  • Industrial electronics — Suitable for applications that need operation across −40 °C to 85 °C and a 3.0–3.6 V supply.

Unique Advantages

  • Mid-density capacity: 256 Mbit density provides a balance between storage capacity and board space for system memory requirements.
  • Synchronous operation at 143 MHz: Clock-rate support and 5.4 ns access time enable predictable timing in SDRAM-based designs.
  • Standard LVTTL interface: Simplifies integration with logic-level systems and common memory controllers that support LVTTL.
  • Wide supply range: 3.0 V to 3.6 V operation accommodates typical 3 V system power rails.
  • Compact 54‑TSOP II package: Space-efficient package (0.400", 10.16 mm width) for dense board layouts.
  • Extended temperature rating: −40 °C to 85 °C specification supports deployment in a range of ambient conditions.

Why Choose IS42S83200L-7TLI?

The IS42S83200L-7TLI positions itself as a straightforward mid-density SDRAM option for designs that require 256 Mbit of synchronous DRAM in a compact 54‑TSOP II package. Its 32M × 8 organization, LVTTL interface, and support for up to 143 MHz clocking deliver predictable synchronous memory behavior while the 3.0–3.6 V supply range and −40 °C to 85 °C operating window provide robustness across many environments.

This device is suitable for engineers and procurement teams specifying board-level SDRAM where moderate capacity, compact packaging, and defined timing characteristics are required. The clear electrical and mechanical specifications simplify integration and lifecycle planning for projects that rely on standardized SDRAM building blocks.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for the IS42S83200L-7TLI.

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