IS42S86400B-7TLI

The IS42S86400B-7TLI is a 512Mbit synchronous DRAM device organized as 64M × 8 with a quad-bank architecture and pipeline operation. It is designed for 3.3V VDD/VDDQ memory systems and provides parallel SDRAM operation in a space-efficient 54-pin TSOP-II package.

This device is targeted at designs requiring a high-speed, fully synchronous DRAM solution with programmable latency and burst control, available in commercial and industrial temperature grades.

Key Features

• Memory Core 512Mbit SDRAM organized as 64M × 8 with internal quad-bank configuration to support concurrent bank operations.
• Synchronous Pipeline Architecture Fully synchronous operation with all signals referenced to the rising edge of the clock for predictable timing behavior.
• Performance Supports clock frequencies of 166, 143, and 133 MHz with access times down to 5.4 ns (CAS latency = 3) and programmable CAS latency options of 2 or 3 clocks.
• Burst and Addressing Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences; random column address every clock cycle.
• Refresh and Self-Refresh Auto Refresh (CBR) and Self Refresh supported; 8K refresh cycles selectable for 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade).
• Interface and Signaling Parallel SDRAM interface with LVTTL-compatible signals.
• Power Designed for 3.3V VDD and VDDQ operation and specified supply range of 3.0 V to 3.6 V.
• Package Available in 54-pin TSOP-II (0.400", 10.16 mm width) package (Supplier device package: 54-TSOP II).
• Operating Temperature Options Commercial: 0°C to +70°C; Industrial: −40°C to +85°C; datasheet also lists automotive-grade ranges (A1/A2) where applicable.

Unique Advantages

• High-speed synchronous transfers: Pipeline architecture and support for up to 166 MHz clocking enable low-latency, predictable data access patterns.
• Flexible performance scaling: Multiple clock-frequency and CAS-latency options allow tuning for throughput versus latency trade-offs.
• Burst programmability: Programmable burst length and sequence modes simplify interface timing and optimize block data transfers.
• Robust refresh options: Selectable refresh timing (8K cycles) and self-refresh support reduce refresh management burden in system designs.
• Compact packaging: 54-pin TSOP-II footprint provides a compact physical option for board-level memory integration.
• Wide temperature coverage: Multiple grade ranges including industrial temperatures provide deployment flexibility across environments.

Why Choose IS42S86400B-7TLI?

The IS42S86400B-7TLI combines a 512Mbit SDRAM density with a fully synchronous, quad-bank pipeline architecture to deliver deterministic timing and configurable performance. Its programmable CAS latency and burst controls make it adaptable to different system timing and throughput requirements while operating in standard 3.3V memory systems.

This device is suitable for designs that require a parallel SDRAM memory in a 54-pin TSOP-II package and need options for industrial temperature operation and selectable refresh/latency behaviors. The IS42S86400B-7TLI offers a clear specification set for predictable integration into memory subsystems.

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