IS42S86400D-6TLI

The IS42S86400D-6TLI is a 512 Mbit synchronous DRAM organized as 64M × 8 using a fully synchronous, pipelined architecture. It provides parallel SDRAM memory with programmable burst length and CAS latency for systems that require deterministic, clocked memory access.

Key attributes include a 166 MHz clock rating, 5.4 ns access time (CL-dependent), a 54-pin TSOP-II package, a parallel memory interface, a 3.0–3.6 V supply range, and an operating temperature range of −40°C to +85°C.

Key Features

• Core & architecture  Fully synchronous SDRAM with internal banks and pipeline architecture; all signals referenced to the rising edge of the clock.
• Memory capacity & organization  512 Mbit density configured as 64M × 8 across four internal banks.
• Performance  166 MHz clock frequency (–6 speed grade) with access time from clock as low as 5.4 ns (CAS-latency dependent).
• Programmability  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks).
• Refresh & reliability  Auto Refresh and Self Refresh support with 8K refresh cycles per 64 ms (standard refresh operation documented).
• Interface  Parallel memory interface with LVTTL-compatible signaling and random column access every clock cycle.
• Power  Supply voltage range listed as 3.0 V to 3.6 V for this device variant.
• Package & thermal  54-pin TSOP-II (0.400" / 10.16 mm width) in a compact surface-mount footprint; operating temperature −40°C to +85°C (TA).

Typical Applications

• High-speed system memory  Provides 512 Mbit of parallel SDRAM capacity for designs that require synchronous, clocked memory access.
• Industrial equipment  Suitable for systems needing operation across −40°C to +85°C, where a parallel SDRAM interface and TSOP-II footprint are required.
• Legacy/parallel-interface designs  Fits applications and boards designed around 54-pin TSOP-II parallel SDRAM packages and LVTTL signaling.

Unique Advantages

• Deterministic synchronous operation: Programmable CAS latency and burst controls enable predictable, clock-referenced data transfers.
• Flexible burst and access modes: Support for multiple burst lengths and sequential/interleave burst sequences simplifies memory controller tuning for throughput or latency.
• Industrial temperature support: Rated for −40°C to +85°C, enabling use in temperature-challenging environments.
• Compact TSOP-II package: 54-pin TSOP-II package provides a small-footprint solution for PCB designs constrained by board area.
• Standard supply range: Operates from 3.0 V to 3.6 V, matching common 3.3 V system power rails.
• Documented vendor specification: Device functions and timing parameters are specified in the manufacturer datasheet for design validation.

Why Choose IS42S86400D-6TLI?

The IS42S86400D-6TLI combines 512 Mbit density, a fully synchronous pipelined architecture, and programmable latency/burst features to deliver a predictable parallel SDRAM solution for systems that demand clock-referenced memory access. Its 54-pin TSOP-II package and support for −40°C to +85°C operation make it practical for board-level designs where compact footprint and extended temperature range are important.

This device is suited for engineers specifying parallel SDRAM in applications that require documented timing, programmable access modes, and a standard 3.0–3.6 V supply. Detailed electrical and timing specifications are provided in the manufacturer documentation to support integration and validation in the design cycle.

Request a quote or submit an inquiry for pricing and availability of IS42S86400D-6TLI.