IS43DR16160A-37CBL-TR

The IS43DR16160A-37CBL-TR is a 256 Mbit DDR2 SDRAM organized as 16M x 16 with a parallel memory interface. It implements a double-data-rate architecture with 4-bit prefetch and on-chip DLL to support high-speed synchronous data transfers.

This device is intended for systems requiring a compact 256Mbit DDR2 memory solution with programmable timing, JEDEC-compatible 1.8V I/O, and commercial temperature operation (0°C to 85°C).

Key Features

• DDR2 Double-Data-Rate Architecture Two data transfers per clock cycle with a 4-bit prefetch architecture for increased throughput.
• Memory Organization 16M × 16 organization providing a total memory size of 256 Mbit.
• Speed and Timing Clock frequency 266 MHz and access time 500 ps; programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5) as specified in the datasheet.
• Interface and Signal Integrity JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS/ DQS¯) and on-die termination (ODT) for improved signal integrity.
• Internal Architecture On-chip DLL to align DQ and DQS with CK and four internal banks to support concurrent operations.
• Power Supply voltage range 1.7 V to 1.9 V (VDD, VDDQ = 1.8 V ±0.1 V).
• Programmability Support for posted CAS, adjustable data-output drive strength, and selectable burst lengths (4 or 8) for flexible system timing and throughput trade-offs.
• Package and Mounting 84-ball WBGA package (84-TWBGA, 8 mm × 12.5 mm) suitable for board-level mounting in compact designs.
• Operating Temperature Commercial temperature range: 0°C to 85°C (case temperature).

Typical Applications

• Parallel DDR2 memory subsystems — Integration as a 256 Mbit parallel DRAM device where DDR2 interface and JEDEC 1.8V I/O are required.
• Embedded systems with compact board constraints — 84-ball WBGA package supports compact board-level memory implementations.
• Designs requiring programmable timing — Systems that benefit from selectable CAS latency, additive latency, and burst length options for tuning performance.

Unique Advantages

• High-bandwidth DDR2 interface: Double-data-rate operation and differential DQS enable two data transfers per clock cycle for improved throughput.
• Flexible timing control: Programmable CAS latency (3–6), additive latency options, and burst length selection allow designers to optimize performance for specific system needs.
• Signal integrity features: On-chip DLL, on-die termination, and adjustable drive strength help maintain reliable signaling at DDR2 speeds.
• Low-voltage operation: 1.7 V–1.9 V supply supports standard DDR2 power rails (VDD, VDDQ = 1.8 V ±0.1 V) for reduced power compared with higher-voltage memories.
• Compact package: 84-ball WBGA (8 mm × 12.5 mm) provides a small footprint for space-constrained designs.
• Proven architecture: 4-bank organization and 4n prefetch DDR2 design align with documented DDR2 SDRAM behavior for predictable integration.

Why Choose IS43DR16160A-37CBL-TR?

The IS43DR16160A-37CBL-TR delivers a compact, standards-based 256 Mbit DDR2 memory solution that combines DDR2 double-data-rate performance, programmable timing, and signal-integrity features such as on-die termination and an on-chip DLL. Its 16M × 16 organization and 84-ball WBGA package make it suitable for board-level implementations where density and timing flexibility are important.

This device is appropriate for designers needing a JEDEC-compatible 1.8V DDR2 parallel DRAM with commercial temperature operation, flexible latency configuration, and documented timing parameters for straightforward system integration.

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