IS43DR16160A-3DBI

The IS43DR16160A-3DBI is a 256Mbit DDR2 SDRAM organized as 16M x 16 with a parallel memory interface in an 84‑TWBGA (8×12.5 mm) package. It implements a double-data-rate architecture with a 4‑bit prefetch and on‑chip DLL to deliver high‑speed, synchronous transfers at 1.8V I/O levels.

This device is intended for designs that require compact, parallel DDR2 memory with programmable timing, on‑die termination, and industrial ambient temperature performance.

Key Features

• Core / Architecture  Double‑data‑rate DDR2 architecture with 4‑bit prefetch and on‑chip DLL for aligned DQ/DQS transitions; supports differential data strobe (DQS and /DQS).
• Memory Organization & Density  256 Mbit total; organized as 16M × 16 with 4 internal banks and programmable burst lengths of 4 or 8.
• Timing & Performance  Clock frequency listed at 333 MHz; programmable CAS latencies CL = 3, 4, 5, 6 and programmable additive latency AL = 0–5. Typical access timing examples and speed grades are provided in the datasheet.
• Interface & I/O  JEDEC‑standard 1.8V I/O (SSTL_18‑compatible) supporting double data transfers per clock cycle.
• Power & Voltage  Supply voltage range 1.7 V to 1.9 V (VDD = VDDQ = 1.8 V ±0.1 V).
• Signal Integrity  On‑die termination (ODT) and adjustable data‑output drive strength options.
• Package & Mounting  84‑TWBGA package (8 × 12.5 mm) suitable for high‑density board mounting.
• Operating Temperature  Ambient operating range specified as −40°C to 85°C (TA).
• Write & Cycle Timing  Write cycle time (word/page) specified at 15 ns; example key timing parameters (tRCD, tRP, tRAS, tRC) are listed per speed grade in the datasheet.

Typical Applications

• High‑speed system memory  Use as parallel DDR2 SDRAM in systems that require predictable double‑data‑rate transfers and programmable latency.
• Compact, high‑density boards  84‑TWBGA (8×12.5 mm) package enables dense memory mounting in space‑constrained PCBs.
• Industrial ambient environments  Operation across −40°C to 85°C ambient for applications requiring extended temperature range.

Unique Advantages

• Double‑data‑rate throughput: Supports two data transfers per clock cycle via DDR2 architecture and differential DQS for efficient high‑speed data movement.
• Flexible timing configuration: Programmable CAS latency (3–6) and additive latency (0–5) with selectable burst lengths (4 or 8) to match system timing requirements.
• SSTL_18‑compatible I/O and VDD tolerance: 1.7–1.9 V supply window and JEDEC 1.8V I/O compatibility simplify integration with 1.8V memory interfaces.
• Signal integrity features: On‑die termination and adjustable output drive strength help manage signal quality on high‑speed buses.
• Compact BGA package: 84‑TWBGA (8×12.5 mm) provides a small footprint for 256 Mbit density in space‑constrained designs.
• Industrial temperature capability: Specified ambient range down to −40°C supports deployment in temperature‑sensitive environments.

Why Choose IS43DR16160A-3DBI?

The IS43DR16160A-3DBI combines DDR2 double‑data‑rate operation, programmable timing options, on‑die termination, and a compact 84‑TWBGA package to deliver a predictable 256Mbit parallel DRAM solution. Its 1.8V I/O compatibility and support for multiple CAS/additive latency settings make it a practical choice for engineers needing configurable DDR2 memory behavior in compact hardware.

This part is well suited to designs that require a balance of density, timing flexibility, and industrial ambient operation, enabling straightforward integration where 16M × 16 organization and compact BGA mounting are required.

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