IS43DR16160A-3DBL-TR

The IS43DR16160A-3DBL-TR is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface in an 84-ball WBGA package (8 mm × 12.5 mm). It uses a double-data-rate architecture and on-chip timing features to deliver high-speed parallel memory transfers.

This device is intended for designs that require a compact, low-voltage (1.7 V–1.9 V) DDR2 memory solution with programmable latency and on-die signal conditioning for reliable high-speed operation. Operating ambient temperature is specified as 0°C to 70°C.

Key Features

• Memory Architecture  256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel interface and 4 internal banks for concurrent operation.
• Double-Data-Rate Interface  DDR2 double-data-rate transfers provide two data words per clock cycle; differential data strobe (DQS/ /DQS) is supported for aligned data capture.
• Timing and Performance  On-chip DLL for DQ/DQS alignment, programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5); programmable burst lengths of 4 or 8.
• Signal Integrity  JEDEC-standard 1.8 V I/O (SSTL_18-compatible), adjustable data-output drive strength and on-die termination (ODT) to help optimize board-level signal quality.
• Prefetch and Internal Design  4-bit prefetch architecture to support the DDR2 interface and efficient data throughput.
• Key Electrical & Timing Specs  Supply voltage 1.7 V–1.9 V; clock frequency listed at 333 MHz; access time 450 ps; write cycle time (word/page) 15 ns.
• Package & Temperature  84-TWBGA (8 mm × 12.5 mm) package; ambient operating temperature 0°C to 70°C.

Typical Applications

• Embedded memory subsystems  Compact DDR2 256 Mbit storage for systems requiring parallel DRAM in a small WBGA footprint.
• High-speed data buffering  Use where double-data-rate transfers and programmable latencies are needed to match system timing.
• Board-level memory expansion  Integration into designs that require a low-voltage (1.7 V–1.9 V) DDR2 device with on-die termination and drive-strength options.

Unique Advantages

• Double-data-rate transfers:  Provides two data words per clock cycle for improved throughput compared to single-data-rate devices.
• Programmable timing flexibility:  Multiple CAS latency and additive latency settings allow tuning to host controller timing requirements.
• On-die signal conditioning:  DLL, adjustable drive strength and ODT help simplify board-level signal integrity design.
• Compact WBGA package:  84-ball WBGA (8 mm × 12.5 mm) minimizes PCB area for space-constrained applications.
• Low-voltage operation:  1.7 V–1.9 V supply range supports low-voltage system designs while maintaining DDR2 interface compatibility.

Why Choose IS43DR16160A-3DBL-TR?

The IS43DR16160A-3DBL-TR positions itself as a compact DDR2 SDRAM option that balances performance and integration: DDR2 double-data-rate transfers, on-chip DLL and ODT, and programmable timing options let designers tune throughput and signal behavior to system needs. Its 16M × 16 organization and 256 Mbit capacity make it suitable where moderate-density parallel DRAM is required in a small WBGA package.

This device is appropriate for engineers specifying low-voltage DDR2 memory with explicit timing control and board-level signal management. The datasheet-provided timing and electrical parameters offer verifiable design inputs for system integration and long-term bill-of-material planning.

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