IS43DR16160A-5BBLI-TR

The IS43DR16160A-5BBLI-TR is a 256Mbit DDR2 SDRAM organized as 16M × 16 in an 84-ball thin wafer BGA (8 mm × 12.5 mm) package. It implements a double-data-rate architecture with on-chip DLL and a 4-bit prefetch to support high-rate data transfers on a parallel DDR2 interface.

Designed for board-level memory expansion where a compact, 1.8V-class parallel DRAM is required, this device provides programmable timing options and on-die features to address signal-integrity and performance tuning needs.

Key Features

• Core / Architecture  Double-data-rate (DDR2) operation with 4-bit prefetch and an on-chip DLL to align DQ and DQS transitions with CK.
• Memory Organization  256 Mbit density organized as 16M × 16 with four internal banks for concurrent operation.
• Timing & Performance  Programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5). Supported burst lengths: 4 or 8. Listed timing parameters include tCK variants and typical tRCD/tRP values shown in the device timing table.
• Interface  JEDEC-standard 1.8V I/O (SSTL_18-compatible) double-data-rate parallel interface with differential data strobe (DQS/ DQS̄).
• Signal Integrity  On-die termination (ODT) and adjustable data-output drive strength to help optimize board-level signal quality.
• Power  Nominal VDD/VDDQ = 1.8 V (specified 1.7 V to 1.9 V supply range).
• Performance Numbers  Specified clock frequency 200 MHz with an access time of 600 ps and a typical write-cycle time (word page) of 15 ns.
• Package & Temperature  84-TWBGA (8 mm × 12.5 mm) package; ambient operating temperature range −40 °C to 85 °C.

Typical Applications

• Board-level memory expansion  Provides a 256 Mbit parallel DDR2 SDRAM option where compact, 1.8V-class memory density is required on system boards.
• High-speed data buffering  Suitable for designs that need DDR2 performance with programmable latencies and burst control for data buffering tasks.
• Compact, high-density modules  The 84-ball WBGA package enables placement in space-constrained designs that require a 16M × 16 memory organization.

Unique Advantages

• Flexible timing configuration: Programmable CAS and additive latencies plus selectable burst lengths allow designers to tune performance to system timing requirements.
• Signal-integrity features: Differential DQS, on-chip DLL, on-die termination, and adjustable drive strength help optimize data capture and board-level signal quality.
• 1.8V SSTL-compatible I/O: Operates within a 1.7–1.9 V supply window, matching JEDEC 1.8 V I/O signaling expectations for DDR2 systems.
• Compact WBGA footprint: 84-TWBGA (8 mm × 12.5 mm) package provides a small, solderable package for high-density board integration.
• Wide operating range: Specified ambient operation from −40 °C to 85 °C supports deployment in varied temperature environments.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160A-5BBLI-TR delivers a straightforward, board-level DDR2 memory option with 256 Mbit density, programmable timing, and on-die features that support reliable high-speed operation. Its combination of differential DQS, DLL alignment, ODT and drive-strength options makes it suitable for designs that require tunable timing and improved signal integrity.

This device is appropriate for engineers specifying compact, parallel DDR2 memory in systems requiring a 16M × 16 organization and a small 84-ball WBGA footprint. The clear electrical and timing specifications enable predictable integration and tuning during memory subsystem design.

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