IS43DR16160B-25DBLI
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 774 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43DR16160B-25DBLI – IC DRAM 256MBIT PAR 84TWBGA
The IS43DR16160B-25DBLI is a 256 Mbit DDR2 SDRAM fabricated by Integrated Silicon Solution Inc. It provides a parallel memory interface organized as 16M × 16, designed for applications requiring mid-density, high-speed volatile memory.
Key attributes include DDR2 architecture with a 400 MHz clock frequency, 1.7 V–1.9 V supply range, and an operating temperature window of –40°C to 85°C, offering a balance of performance and environmental tolerance for industrial and embedded designs.
Key Features
- Memory Architecture DDR2 SDRAM organized as 16M × 16, delivering a total memory capacity of 256 Mbit in a parallel memory format.
- Performance Supports a 400 MHz clock frequency and lists an access time of 400 ps with a write cycle time (word page) of 15 ns for timing-sensitive applications.
- Power Operates from a 1.7 V to 1.9 V supply range, matching typical DDR2 low-voltage system rails.
- Package Supplied in an 84‑TWBGA package (8 × 12.5 mm) with package case referenced as 84‑TFBGA, providing a compact BGA footprint for board-level integration.
- Environmental Range Rated for operation from –40°C to 85°C (TA), supporting a wide range of ambient conditions.
- Memory Interface & Organization Parallel DRAM interface with 16-bit data organization (16M × 16) suitable for systems using parallel SDRAM buses.
Unique Advantages
- DDR2 performance at 400 MHz: Delivers high-speed DDR2 operation for improved data throughput where mid-density DRAM is required.
- Compact BGA package: The 84‑TWBGA (8 × 12.5 mm) package provides a small board footprint for space-constrained designs.
- Low-voltage operation: 1.7 V–1.9 V supply compatibility supports low-voltage system architectures and power-optimized designs.
- Wide operating temperature: –40°C to 85°C rating helps maintain functionality across a broad range of ambient conditions.
- Predictable timing: Documented access time (400 ps) and write cycle time (15 ns) simplify timing analysis and memory subsystem design.
Why Choose IS43DR16160B-25DBLI?
The IS43DR16160B-25DBLI positions itself as a mid-density DDR2 SDRAM option combining 256 Mbit capacity, 16‑bit organization, and 400 MHz operation in a compact BGA package. Its voltage and temperature specifications make it suitable for embedded and industrial applications that require reliable, low-voltage DDR2 memory with defined timing characteristics.
Manufactured by Integrated Silicon Solution Inc., this device is suited for designers and procurement teams seeking a verified DDR2 parallel DRAM component with clear electrical, timing, and package data to support system-level memory integration and qualification activities.
Request a quote or contact sales for pricing, lead times, and availability of the IS43DR16160B-25DBLI.
