IS43DR16160B-37CBL-TR

IC DRAM 256MBIT PAR 84TWBGA
Part Description

IC DRAM 256MBIT PAR 84TWBGA

Quantity 400 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time10 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size256 MbitAccess Time500 psGradeCommercial
Clock Frequency266 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43DR16160B-37CBL-TR – IC DRAM 256MBIT PAR 84TWBGA

The IS43DR16160B-37CBL-TR is a 256 Mbit volatile DRAM device implemented as DDR2 SDRAM with a parallel memory interface. It is organized as 16M × 16 and is offered in a ball grid array package intended for surface-mount system designs.

Key operational parameters include a 266 MHz clock frequency, a 1.7 V to 1.9 V supply range, and an operating temperature range of 0°C to 70°C, making it suitable for designs that require DDR2 memory with defined timing and package constraints.

Key Features

  • Memory Type & Technology Volatile DRAM implemented as DDR2 SDRAM, providing double-data-rate operation as specified for this device.
  • Organization & Capacity 256 Mbit total capacity organized as 16M × 16 bits for parallel memory access.
  • Performance Specified clock frequency of 266 MHz and an access time of 500 ps for read access characterization.
  • Timing Write cycle time (word page) specified at 15 ns, supporting page write timing requirements.
  • Power Operates from a 1.7 V to 1.9 V supply voltage range as provided in the device specifications.
  • Package & Mounting Provided in an 84-ball BGA package (listed as 84-TFBGA and as 84-TWBGA with 8 × 12.5 mm footprint) for surface-mount assembly.
  • Temperature Range Specified operating ambient temperature from 0°C to 70°C (TA).

Unique Advantages

  • DDR2 SDRAM architecture: Provides double-data-rate operation consistent with DDR2 signaling for designs requiring that memory type.
  • Defined timing parameters: 266 MHz clock frequency and 500 ps access time enable predictable performance and system timing analysis.
  • Compact BGA footprint: 84-ball BGA packaging (including supplier-specified 84-TWBGA 8×12.5 mm) supports high-density board layouts and surface-mount assembly.
  • Parallel 16-bit organization: 16M × 16 organization simplifies bus interfacing for parallel memory controllers.
  • Specified supply and thermal limits: Clear supply range (1.7 V–1.9 V) and operating temperature (0°C–70°C) allow engineering teams to design power and thermal management to match device constraints.

Why Choose IS43DR16160B-37CBL-TR?

The IS43DR16160B-37CBL-TR delivers a defined DDR2 SDRAM solution with explicit electrical, timing, and packaging specifications that facilitate system-level integration and timing verification. Its 256 Mbit capacity in a 16M × 16 organization, combined with 266 MHz clocking and a compact 84-ball BGA package, makes it applicable where DDR2 parallel memory is required and package density matters.

This device is suited for designers and procurement teams that need clear, verifiable memory specifications for board-level integration and that require known supply and temperature bounds for their designs.

Request a quote or contact the sales team to discuss availability, lead times, and pricing for IS43DR16160B-37CBL-TR.

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