IS43DR16160B-37CBLI-TR

IC DRAM 256MBIT PAR 84TWBGA
Part Description

IC DRAM 256MBIT PAR 84TWBGA

Quantity 150 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time10 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size256 MbitAccess Time500 psGradeIndustrial
Clock Frequency266 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43DR16160B-37CBLI-TR – IC DRAM 256MBIT PAR 84TWBGA

The IS43DR16160B-37CBLI-TR is a 256 Mbit volatile DRAM device organized as 16M × 16 using DDR2 SDRAM technology with a parallel interface. It provides a 266 MHz clock frequency and is specified for operation from -40°C to 85°C, making it suitable for designs that require mid-density DDR2 memory in a compact BGA package.

This device targets applications that need synchronous DDR2 memory with defined timing characteristics and low-voltage supply operation, offering a compact footprint and industry-standard memory organization.

Key Features

  • Memory Core 256 Mbit DDR2 SDRAM organized as 16M × 16, providing a parallel memory interface for synchronous data transfer.
  • Performance 266 MHz clock frequency with an access time of 500 ps and a write cycle time (word page) of 15 ns.
  • Power Operates from a 1.7 V to 1.9 V supply range, matching low-voltage DDR2 system requirements.
  • Package Supplied in an 84-ball BGA package (listed as 84-TFBGA and 84-TWBGA with an 8 × 12.5 mm footprint), optimized for compact board layouts.
  • Temperature Range Industrial operating temperature range of -40°C to 85°C (TA).
  • Memory Interface Parallel DDR2 interface suitable for systems designed around synchronous DRAM signaling.

Typical Applications

  • Embedded memory systems — Use as on-board DDR2 memory where a 256 Mbit, 16M × 16 organization is required for buffering or working memory.
  • Industrial control equipment — Provides DDR2 memory capacity with an operating range of -40°C to 85°C for temperature-challenged environments.
  • Compact board designs — The 84-ball BGA (8 × 12.5 mm) package supports space-constrained layouts that need DDR2 memory integration.

Unique Advantages

  • Standard DDR2 interface: Parallel DDR2 SDRAM architecture with defined timing parameters for integration into synchronous memory subsystems.
  • Defined performance metrics: 266 MHz clock frequency, 500 ps access time, and 15 ns write cycle time provide clear timing targets for system designers.
  • Low-voltage operation: 1.7 V to 1.9 V supply range aligns with low-voltage DDR2 system designs.
  • Compact BGA package: 84-ball BGA (84-TFBGA / 84-TWBGA 8×12.5) reduces PCB area for space-sensitive applications.
  • Wide operating temperature: Rated for -40°C to 85°C to support deployment in a range of environmental conditions.
  • Clear memory organization: 16M × 16 arrangement simplifies capacity planning and system memory mapping.

Why Choose IS43DR16160B-37CBLI-TR?

The IS43DR16160B-37CBLI-TR is positioned for designs that require a mid-density DDR2 SDRAM with explicit timing and voltage specifications, a compact BGA footprint, and an industrial temperature range. Its 16M × 16 organization and 256 Mbit capacity make it straightforward to integrate into systems needing parallel DDR2 memory.

Choose this device when you need verifiable DDR2 memory parameters, a low-voltage supply range, and a small-package form factor that supports constrained PCB real estate while maintaining a usable temperature range for many embedded and industrial applications.

Request a quote or submit an inquiry to obtain pricing and availability for the IS43DR16160B-37CBLI-TR.

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