IS43DR16160B-3DBL

The IS43DR16160B-3DBL is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It operates with a clock frequency up to 333 MHz and supports standard DDR2 timing characteristics.

This device is intended for designs that require a compact parallel DDR2 DRAM solution with a 1.7 V–1.9 V supply range and commercial operating temperature of 0 °C to 70 °C.

Key Features

• Memory Core 256 Mbit DRAM organized as 16M × 16, providing a parallel interface for external memory expansion.
• DDR2 SDRAM Technology Implements DDR2 SDRAM architecture with a maximum clock frequency of 333 MHz for synchronous burst transfers.
• Performance Specified access time of 450 ps and a write cycle time (word page) of 15 ns for timing-sensitive designs.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V to match DDR2 system power rails.
• Package Supplied in an 84-ball BGA package (listed as 84-TWBGA with dimensions 8 × 12.5 mm; package case also indicated as 84-TFBGA).
• Operating Range Commercial ambient temperature range of 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory expansion — Provides a 256 Mbit DDR2 parallel memory option for systems requiring external DRAM capacity.
• Buffering and frame storage — Suitable for designs that need synchronous burst transfers and predictable timing for temporary data storage.
• General-purpose system memory — Can be used wherever a 16M × 16 DDR2 parallel memory device is required in a compact BGA package.

Unique Advantages

• Compact BGA footprint: The 84-ball BGA package (84-TWBGA, 8 × 12.5 mm) enables space-efficient PCB layouts for dense system designs.
• DDR2 synchronous operation: Supports DDR2 timing and a 333 MHz clock rate for synchronous burst transfer performance.
• Low-voltage supply: Operates at 1.7 V–1.9 V to align with DDR2 low-voltage system rails and reduce power domain complexity.
• Clear timing specifications: Documented access time (450 ps) and write cycle timing (15 ns) assist predictable memory timing and integration.
• Standard parallel interface: 16-bit wide organization (16M × 16) simplifies integration into existing parallel-memory architectures.

Why Choose IS43DR16160B-3DBL?

The IS43DR16160B-3DBL positions itself as a straightforward 256 Mbit DDR2 SDRAM device for designs that require a compact, parallel DRAM solution with defined timing and low-voltage operation. Its 16M × 16 organization, 333 MHz clock capability, and BGA packaging make it suitable for systems that need predictable synchronous memory behavior in a small footprint.

This device is appropriate for engineers specifying external DRAM where commercial temperature operation, documented access and cycle timings, and a 1.7 V–1.9 V supply range are required.

To request pricing or submit a product quote for the IS43DR16160B-3DBL, please request a quote or submit an inquiry through your preferred procurement channel.