IS43DR16320C-25DBI

The IS43DR16320C-25DBI is a 512Mbit DDR2 SDRAM organized as 32M × 16bits in an 84-ball WBGA package. It implements a double-data-rate architecture with a 4-bit prefetch and on-chip DLL to support high-speed parallel memory transfers and aligned DQ/DQS timing.

Designed for systems that require a compact parallel DDR2 memory device, this part delivers programmable latencies, on-die termination and SSTL_18-compatible I/O at VDD/VDDQ = 1.8V ±0.1V, and supports operation across a wide ambient temperature range.

Key Features

• Core / Architecture  Double data rate (DDR2) architecture with 4-bit prefetch and on-chip DLL to align DQ and DQS transitions with CK.
• Memory Organization  512 Mbit capacity configured as 32M × 16 with 4 internal banks (8M × 16 × 4 banks).
• Data Interface  Parallel DDR2 interface with differential data strobe (DQS/ĎQS) and JEDEC-standard 1.8V I/O (SSTL_18-compatible).
• Programmable Timing  Supports CAS latency (CL) 3, 4, 5 and 6, programmable additive latency (AL) 0–5, posted CAS and programmable burst lengths of 4 or 8.
• Performance  Key timing examples: tCK = 5ns @CL=3, 3.75ns @CL=4, 2.5–3.0ns @CL=5 depending on speed grade; write latency = read latency − 1 tCK.
• Power  VDD / VDDQ operating range: 1.7V to 1.9V (nominal 1.8V ±0.1V).
• Signal Integrity  On-die termination (ODT) and adjustable data-output drive strength (full and reduced-strength options).
• Package & Mechanical  84-ball thin/wide BGA (84-TWBGA) footprint with dimensions 8mm × 12.5mm.
• Temperature Range  Specified ambient operating range: −40°C to 85°C (TA).

Typical Applications

• Memory subsystems  Provides 512Mbit parallel DDR2 storage for systems requiring compact board-level DRAM integration.
• High-speed buffering  Suitable where double-data-rate transfers and programmable CAS/burst behavior are needed for buffering and data staging.
• Compact embedded modules  Small 84-ball WBGA package supports high-density memory on space-constrained PCBs.

Unique Advantages

• Flexible timing configuration  Programmable CAS latency (3–6), additive latency options (0–5) and burst length (4/8) allow designers to tune performance to system timing requirements.
• SSTL_18-compatible I/O  JEDEC-standard 1.8V I/O ensures compatibility with 1.8V signaling domains and simplifies interface design.
• On-die termination and drive strength control  Integrated ODT and adjustable drive strength help optimize signal integrity without additional external components.
• Compact package  84-TWBGA (8mm × 12.5mm) package provides a low-profile, space-efficient solution for board-level memory expansion.
• Wide operating ambient range  Specified for −40°C to 85°C ambient operation, supporting a range of temperature environments.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

The IS43DR16320C-25DBI delivers a balanced DDR2 memory solution combining programmable timing, SSTL_18-compatible I/O and integrated signal integrity features in a compact 84-ball WBGA. Its 32M × 16 organization and 4-bank architecture provide predictable memory capacity and concurrency for board-level designs.

This device is suited to designs that require configurable DDR2 performance and a small package footprint while operating from a 1.8V supply and across an extended ambient temperature range. The combination of on-die termination, DLL timing alignment and adjustable drive strength supports robust integration into parallel memory subsystems.

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