IS43DR16320D-25DBI

The IS43DR16320D-25DBI is a 512Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with a 4n-prefetch and differential data strobe to deliver high-speed memory transfers for systems that require parallel DDR2 memory.

Designed for compact board layouts, the device is offered in an 84-ball thin WBGA package and targets applications that need a 512Mbit DDR2 memory solution operating at 1.8V nominal with an ambient operating range down to −40°C.

Key Features

• Core / Architecture Double-data-rate (DDR2) architecture with 4-bit prefetch and differential data strobe (DQS / DQS̄) for two data transfers per clock cycle.
• Memory Organization 512Mbit capacity organized as 32M × 16 with 4 internal banks and 8K refresh count (8K/64ms as shown in datasheet table for 32M × 16 configuration).
• Timing and Performance 400 MHz clock frequency and 400 ps access time; programmable CAS latency options include CL = 3, 4, 5, and 6 with programmable additive latency and burst lengths of 4 or 8.
• Power Low-voltage operation: VDD / VDDQ specified at 1.8V ±0.1V (listed supply range 1.7V to 1.9V).
• Signal Integrity and Output Options On-chip DLL to align DQ/DQS transitions with CK, on-die termination (ODT) and adjustable data-output drive strength (full and reduced options) for improved signal quality.
• Package 84-ball thin WBGA package (84-TWBGA) with supplier device package dimensions 8 × 12.5 mm for space-constrained PCB designs.
• Temperature Ambient operating temperature range specified as −40°C to 85°C (TA).

Typical Applications

• Embedded Memory Subsystems — Use as parallel DDR2 system memory where 512Mbit density and DDR2 timing flexibility are required.
• Networking and Communications Equipment — Suited for control and buffer memory in communication modules that need fast parallel DDR2 transfers and multiple internal banks.
• Consumer and Multimedia Devices — Suitable for devices that require a compact 84-ball WBGA DDR2 memory to support high-throughput data access.
• Industrial Control Systems — Provides a low-voltage DDR2 memory option with an ambient operating range down to −40°C for industrial ambient conditions.

Unique Advantages

• Double-data-rate throughput: The DDR2 architecture and 4-bit prefetch enable two data transfers per clock cycle, increasing effective bandwidth for parallel memory operations.
• Flexible timing configuration: Programmable CAS latencies (3–6), programmable additive latency, and selectable burst lengths (4 or 8) allow tuning for system timing and performance trade-offs.
• Signal integrity features: On-chip DLL, differential DQS, and on-die termination reduce timing skew and simplify routing requirements for reliable high-speed operation.
• Low-voltage operation: VDD / VDDQ at 1.8V ±0.1V (1.7–1.9V range) supports designs targeting lower power supply levels.
• Compact package: 84-TWBGA (8 × 12.5 mm) provides a high-density footprint for space-constrained PCBs.
• Industrial temperature capability: Specified ambient operation from −40°C to 85°C for deployment in a range of operating environments.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

The IS43DR16320D-25DBI delivers a 512Mbit DDR2 SDRAM solution with configurable timing, on-die signal conditioning, and a compact 84-ball WBGA package. Its combination of DDR2 double-data-rate architecture, programmable latencies, and on-die termination makes it suitable for systems that require tuned memory timing and reliable high-speed parallel transfers.

This device is appropriate for designers and procurement teams seeking a 512Mbit parallel DDR2 memory offering with low-voltage operation (1.7–1.9V), 32M × 16 organization, and an ambient operating range to −40°C. It provides long-term design value through standard DDR2 feature support and packaging suited for dense board layouts.

Request a quote or submit an RFQ for IS43DR16320D-25DBI to get pricing and availability information for your project needs.