IS43DR16320C-3DBI

The IS43DR16320C-3DBI from Integrated Silicon Solution Inc. is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel interface. It implements a double-data-rate, 4n-prefetch architecture and on-chip DLL to deliver synchronized high-speed data transfers at the I/O pins.

This device targets designs requiring 512 Mbit DDR2 memory with programmable timing and board-level integration options, offering a compact 84-ball WBGA package and an industrial ambient temperature range.

Key Features

• Core / Architecture Double-data-rate (DDR2) operation with 4-bit prefetch and on-chip DLL for aligned DQ/DQS transitions.
• Memory Organization 512 Mbit capacity organized as 32M × 16 with 4 internal banks for concurrent operation.
• Interface and Timing Differential data strobe (DQS and /DQS), programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5); programmable burst lengths of 4 or 8.
• Performance Clock frequency 333 MHz and access time 450 ps; write cycle time (word page) 15 ns.
• Power Low-voltage operation with VDD/VDDQ = 1.8 V ±0.1 V (specifying 1.7 V to 1.9 V supply range).
• Signal Integrity and Drive On-die termination (ODT) and adjustable data-output drive strength to optimize board signal behavior.
• Package 84-ball WBGA (84-TWBGA, 8 mm × 12.5 mm) ball-grid package for compact board-level integration.
• Operating Range Ambient operating temperature range: −40°C to 85°C (TA).

Unique Advantages

• DDR2 double-data-rate throughput: Two data transfers per clock cycle via DDR2 architecture and differential DQS for efficient high-speed transfers.
• Flexible timing configuration: Programmable CAS latency (3–6) and additive latency (0–5) let designers balance performance and timing margins.
• Signal optimization features: On-die termination and adjustable output drive strength reduce the need for external termination tuning.
• Compact high-density package: 84-ball WBGA (8 mm × 12.5 mm) package enables dense memory integration in space-constrained designs.
• Industrial temperature support: Specified for operation from −40°C to 85°C (TA), supporting a wide range of ambient environments.
• Industry-standard I/O: JEDEC-standard 1.8 V I/O (SSTL_18-compatible) simplifies integration with standard DDR2 memory controllers and board designs.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

The IS43DR16320C-3DBI combines DDR2 double-data-rate performance, programmable timing options, on-die termination, and adjustable drive strength in a compact 84-ball WBGA package. Its 512 Mbit density (32M × 16), four internal banks and on-chip DLL provide a balanced solution for applications needing parallel DDR2 memory with configurable timing.

This device is well suited to designs that require low-voltage (1.7–1.9 V) DDR2 memory with industrial ambient temperature capability and compact board-level integration. Specifications and timing programmability support designers who need control over performance, timing margins and signal integrity on DDR2 memory interfaces.

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