IS43DR16160B-3DBLI-TR

IC DRAM 256MBIT PAR 84TWBGA
Part Description

IC DRAM 256MBIT PAR 84TWBGA

Quantity 156 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time10 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size256 MbitAccess Time450 psGradeIndustrial
Clock Frequency333 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43DR16160B-3DBLI-TR – IC DRAM 256MBIT PAR 84TWBGA

The IS43DR16160B-3DBLI-TR is a 256 Mbit volatile DRAM device implemented as DDR2 SDRAM with a parallel memory interface and a 16M × 16 organization. It provides DDR2-class timing and signaling with a 333 MHz clock frequency and specified access and cycle timings for use in systems requiring external dynamic memory.

Designed in a BGA package and specified for operation from -40°C to 85°C, the device targets applications that require compact packaged DDR2 memory with low-voltage operation (1.7 V to 1.9 V).

Key Features

  • Memory Type & Format 256 Mbit volatile DRAM implemented as DDR2 SDRAM in a 16M × 16 organization with a parallel memory interface.
  • Performance Rated clock frequency: 333 MHz; access time: 450 ps; write cycle time (word page): 15 ns.
  • Power Low-voltage supply range of 1.7 V to 1.9 V for DDR2 operation.
  • Package Supplied in an 84-ball BGA package. Supplier device package listed as 84-TWBGA (8 × 12.5); package case also referenced as 84-TFBGA.
  • Operating Conditions Ambient operating temperature range of -40°C to 85°C (TA).
  • Interface & Timing Parallel memory interface with DDR2 timing characteristics and specified access/write timings for deterministic memory behavior.

Unique Advantages

  • DDR2 performance: Operates at a 333 MHz clock frequency with 450 ps access time and 15 ns write cycle time to meet DDR2 timing requirements.
  • Low-voltage operation: 1.7 V–1.9 V supply reduces memory power domain requirements and supports low-voltage system designs.
  • Compact BGA packaging: Available in an 84-ball BGA (84-TWBGA, 8 × 12.5) to enable dense PCB layouts and small form-factor implementations.
  • Predictable memory organization: 16M × 16 organization provides a clear addressing scheme for system memory mapping and controller integration.
  • Wide operating temperature range: Specified for -40°C to 85°C ambient operation to support applications with extended temperature requirements.
  • Parallel DDR2 interface: Standard parallel DRAM interface and timing make integration with DDR2-compatible controllers straightforward when matching timing parameters.

Why Choose IS43DR16160B-3DBLI-TR?

The IS43DR16160B-3DBLI-TR delivers a 256 Mbit DDR2 SDRAM option with defined timing (333 MHz clock, 450 ps access, 15 ns write cycle) and a compact 84-ball BGA package. Its low-voltage supply range (1.7 V–1.9 V) and -40°C to 85°C operating range make it suitable for designs that require DDR2 memory density, defined timing characteristics, and space-efficient packaging.

This device is appropriate for designs that need a parallel DDR2 memory instance with clear organization and timing specifications, and for teams that prioritize low-voltage DDR2 operation and compact BGA implementation.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43DR16160B-3DBLI-TR.

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