IS43DR16160B-3DBLI-TR
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 156 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43DR16160B-3DBLI-TR – IC DRAM 256MBIT PAR 84TWBGA
The IS43DR16160B-3DBLI-TR is a 256 Mbit volatile DRAM device implemented as DDR2 SDRAM with a parallel memory interface and a 16M × 16 organization. It provides DDR2-class timing and signaling with a 333 MHz clock frequency and specified access and cycle timings for use in systems requiring external dynamic memory.
Designed in a BGA package and specified for operation from -40°C to 85°C, the device targets applications that require compact packaged DDR2 memory with low-voltage operation (1.7 V to 1.9 V).
Key Features
- Memory Type & Format 256 Mbit volatile DRAM implemented as DDR2 SDRAM in a 16M × 16 organization with a parallel memory interface.
- Performance Rated clock frequency: 333 MHz; access time: 450 ps; write cycle time (word page): 15 ns.
- Power Low-voltage supply range of 1.7 V to 1.9 V for DDR2 operation.
- Package Supplied in an 84-ball BGA package. Supplier device package listed as 84-TWBGA (8 × 12.5); package case also referenced as 84-TFBGA.
- Operating Conditions Ambient operating temperature range of -40°C to 85°C (TA).
- Interface & Timing Parallel memory interface with DDR2 timing characteristics and specified access/write timings for deterministic memory behavior.
Unique Advantages
- DDR2 performance: Operates at a 333 MHz clock frequency with 450 ps access time and 15 ns write cycle time to meet DDR2 timing requirements.
- Low-voltage operation: 1.7 V–1.9 V supply reduces memory power domain requirements and supports low-voltage system designs.
- Compact BGA packaging: Available in an 84-ball BGA (84-TWBGA, 8 × 12.5) to enable dense PCB layouts and small form-factor implementations.
- Predictable memory organization: 16M × 16 organization provides a clear addressing scheme for system memory mapping and controller integration.
- Wide operating temperature range: Specified for -40°C to 85°C ambient operation to support applications with extended temperature requirements.
- Parallel DDR2 interface: Standard parallel DRAM interface and timing make integration with DDR2-compatible controllers straightforward when matching timing parameters.
Why Choose IS43DR16160B-3DBLI-TR?
The IS43DR16160B-3DBLI-TR delivers a 256 Mbit DDR2 SDRAM option with defined timing (333 MHz clock, 450 ps access, 15 ns write cycle) and a compact 84-ball BGA package. Its low-voltage supply range (1.7 V–1.9 V) and -40°C to 85°C operating range make it suitable for designs that require DDR2 memory density, defined timing characteristics, and space-efficient packaging.
This device is appropriate for designs that need a parallel DDR2 memory instance with clear organization and timing specifications, and for teams that prioritize low-voltage DDR2 operation and compact BGA implementation.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43DR16160B-3DBLI-TR.