IS43DR16160B-3DBI-TR

The IS43DR16160B-3DBI-TR from ISSI is a 256 Mbit DDR2 SDRAM device organized as 16M × 16 with a parallel memory interface. It implements DDR2 SDRAM architecture to provide synchronous, high-frequency memory access for board-level applications.

Key electrical and timing characteristics include a clock frequency of 333 MHz, access time of 450 ps, a write cycle time (word page) of 15 ns, and a supply range of 1.7 V to 1.9 V. The device is supplied in an 84-TWBGA (8×12.5) package and rated for operation from -40°C to 85°C.

Key Features

• Memory Core 
  256 Mbit capacity organized as 16M × 16, implemented as DDR2 SDRAM for synchronous data transfers.
• Performance 
  Supports a clock frequency of 333 MHz with an access time of 450 ps and a write cycle time (word page) of 15 ns.
• Power 
  Operates from a supply voltage range of 1.7 V to 1.9 V.
• Interface 
  Parallel memory interface suitable for standard DDR2 memory subsystems.
• Package 
  Delivered in an 84-TWBGA package (8×12.5), optimized for board-level mounting.
• Operating Range 
  Qualified for operation across -40°C to 85°C (TC).

Typical Applications

• Industrial systems 
  Memory for systems requiring operation across -40°C to 85°C.
• Compact board-level designs 
  84-TWBGA (8×12.5) package fits space-constrained PCBs where a soldered DRAM is required.
• High-speed memory subsystems 
  Use where 333 MHz DDR2 performance, 450 ps access time, and 15 ns write cycle timing are needed.

Unique Advantages

• High-density DDR2 storage 
  256 Mbit capacity in a 16M × 16 organization provides a compact memory solution on a single device.
• Measured timing characteristics 
  450 ps access time and 15 ns write cycle time provide predictable, documented timing for system design.
• Low-voltage operation 
  1.7 V to 1.9 V supply range supports designs targeting lower supply voltages.
• Wide temperature support 
  Rated for -40°C to 85°C to accommodate extended-temperature applications.
• Board-level packaging 
  84-TWBGA (8×12.5) package enables a compact, soldered memory footprint for space-limited PCBs.
• Manufacturer backing 
  Produced by ISSI (Integrated Silicon Solution Inc.), providing traceability to a known memory supplier.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160B-3DBI-TR positions itself as a compact, soldered DDR2 SDRAM device delivering 256 Mbit of organized memory with defined timing and electrical characteristics. Its combination of 333 MHz clock support, documented access and cycle times, and a low supply voltage range make it suitable for designs that require fixed, board-mounted DDR2 memory.

This device is appropriate for engineers and procurement teams specifying soldered memory for compact PCBs, industrial-temperature applications, or high-speed memory subsystems where predictable timing and a standardized BGA footprint are required.

Request a quote or submit an inquiry for IS43DR16160B-3DBI-TR to obtain availability, lead times, and pricing details.