IS43DR16160B-3DBLI
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 1,718 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43DR16160B-3DBLI – IC DRAM 256MBIT PAR 84TWBGA
The IS43DR16160B-3DBLI is a 256 Mbit DDR2 SDRAM device organized as 16M × 16 with a parallel memory interface. It is designed for systems that require compact, low-voltage DDR2 memory in a BGA package, offering defined timing parameters and an industrial temperature range.
Key Features
- Memory Type & Organization DDR2 SDRAM, volatile memory organized as 16M × 16 for a total of 256 Mbit.
- Interface Parallel memory interface compatible with DDR2 timing and signaling.
- Clock & Timing 333 MHz clock frequency with an access time of 450 ps and a write cycle time (word page) of 15 ns, providing defined timing for system integration.
- Power Operates from a 1.7 V to 1.9 V supply range, supporting low-voltage system designs.
- Package Supplied in an 84-TWBGA package (8 × 12.5 mm) for compact, high-density board mounting.
- Operating Temperature Specified for an ambient temperature range of −40 °C to 85 °C (TA).
- Manufacturer Manufactured by ISSI (Integrated Silicon Solution Inc).
Typical Applications
- Embedded memory subsystems — Used as system or buffer memory where a 256 Mbit DDR2 parallel interface and 16M × 16 organization are required.
- Industrial equipment — Suitable for designs that need operation across −40 °C to 85 °C with defined DDR2 timing characteristics.
- Compact board-level designs — Fits high-density layouts using the 84-TWBGA (8 × 12.5) package for space-constrained PCBs.
Unique Advantages
- Defined DDR2 performance: 333 MHz clock frequency with specified access time (450 ps) and write cycle time (15 ns) enables predictable timing integration.
- Low-voltage operation: 1.7 V–1.9 V supply range supports lower-voltage system architectures.
- Compact BGA packaging: 84-TWBGA (8 × 12.5) package reduces board area for dense designs.
- Industrial temperature support: Rated for −40 °C to 85 °C (TA) to accommodate a wide range of environmental conditions.
- 256 Mbit density in 16M × 16 organization: Provides a mid-range memory capacity with a straightforward parallel mapping for system designers.
Why Choose IC DRAM 256MBIT PAR 84TWBGA?
The IS43DR16160B-3DBLI delivers a balanced DDR2 SDRAM option for designers seeking a 256 Mbit, 16M × 16 memory device with clearly specified timing and voltage requirements. Its 84-TWBGA package and −40 °C to 85 °C operating range make it suitable for compact, temperature-demanding applications where predictable DDR2 behavior is required.
Manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers and procurement teams designing or sourcing parallel DDR2 memory for embedded, industrial, or space-constrained board-level systems that require stable timing and low-voltage operation.
If you need pricing, availability, or a formal quote for IS43DR16160B-3DBLI, request a quote or contact sales to discuss your requirements and lead times.
