IS43DR16160B-3DBI

The IS43DR16160B-3DBI is a 256 Mbit volatile DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It implements DDR2 SDRAM architecture with a specified clock frequency of 333 MHz and is intended for systems requiring external parallel DRAM storage in a compact BGA package.

Key device parameters include a 1.7 V–1.9 V supply range, an access time of 450 ps, a write cycle time (word/page) of 15 ns, and an operating temperature range of –40°C to 85°C, providing defined electrical and thermal characteristics for embedded memory subsystems.

Key Features

• Memory Type & Organization Volatile DRAM implemented as DDR2 SDRAM, organized as 16M × 16 for a total memory size of 256 Mbit.
• Performance Supports a clock frequency of 333 MHz with an access time of 450 ps and a write cycle time (word/page) of 15 ns, offering predictable timing for memory subsystem design.
• Voltage Low-voltage operation with a supply range of 1.7 V to 1.9 V to match DDR2 power domains.
• Interface Parallel memory interface suitable for designs that integrate external parallel DDR2 DRAM.
• Package & Mounting Available in an 84-ball TFBGA package; supplier package listed as 84-TWBGA (8×12.5), enabling compact surface-mount implementations.
• Temperature Range Rated for operation from –40°C to 85°C (TA), supporting a wide range of ambient conditions.

Typical Applications

• Embedded memory subsystems — External DDR2 parallel DRAM for embedded platforms requiring 256 Mbit of volatile storage.
• System buffer memory — Temporary data storage in designs that use a parallel DDR2 memory interface.
• Compact, board-level memory — BGA packaging for space-constrained PCB layouts where a surface-mount DDR2 device is needed.

Unique Advantages

• Low-voltage DDR2 operation: 1.7 V–1.9 V supply range aligns with DDR2 power domains to reduce design-level power constraints.
• Defined timing characteristics: 333 MHz clock frequency and 450 ps access time provide measurable performance parameters for timing-sensitive designs.
• Compact BGA footprint: 84-ball TFBGA / 84-TWBGA (8×12.5) options minimize PCB area for space-limited applications.
• Wide operating temperature: –40°C to 85°C rating supports deployment across a broad range of ambient environments.
• Parallel interface compatibility: Parallel DRAM interface enables integration into existing parallel DDR2 memory architectures.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

IS43DR16160B-3DBI positions itself as a compact, low-voltage DDR2 DRAM device with clear electrical and thermal specifications suitable for designs that require a 256 Mbit parallel memory element. The combination of a 16M × 16 organization, 333 MHz clock capability, and an 84-ball BGA package makes it appropriate for board-level implementations where footprint, timing, and supply constraints are defined.

Designers and procurement teams looking for a DDR2 parallel DRAM option with specified access time, write cycle timing, and a wide operating temperature range can consider this device for projects needing robust, verifiable memory characteristics.

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