IS43DR16160B-3DBL-TR

The IS43DR16160B-3DBL-TR is a 256 Mbit parallel DRAM device implemented as DDR2 SDRAM with a 16M × 16 memory organization. It provides a 333 MHz clock frequency operation with a parallel memory interface and is supplied in a 84-ball BGA package.

This memory device is suitable for designs requiring a compact, low-voltage DDR2 DRAM element operating at VCC = 1.7 V to 1.9 V and an ambient temperature range of 0°C to 70°C. Key performance characteristics include a 450 ps access time and a 15 ns write cycle time (word page).

Key Features

• Memory Type DDR2 SDRAM, volatile memory organized as 16M × 16 for a total of 256 Mbit capacity.
• Performance 333 MHz clock frequency with a specified access time of 450 ps and a write cycle time (word page) of 15 ns.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
• Interface Parallel memory interface compatible with DDR2 signaling.
• Package Supplied in an 84-ball BGA package (listed as 84-TWBGA, 8 × 12.5 mm; package case also referenced as 84-TFBGA).
• Operating Conditions Specified for ambient operating temperatures from 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems — Acts as a DDR2 parallel DRAM element where 256 Mbit capacity and 16-bit data width are required for system memory or buffering.
• High-speed buffering — Provides 333 MHz DDR2 operation suitable for designs needing fast read/write buffering with 450 ps access timing.
• Compact BGA designs — Fits space-constrained PCBs where a small 84-ball BGA (8 × 12.5 mm) memory package is required.

Unique Advantages

• DDR2 performance at 333 MHz: Enables high-rate parallel data transfers consistent with DDR2 timing specifications.
• 16M × 16 organization: Provides a 16-bit data path that can simplify bus design where 16-bit wide memory lanes are used.
• Low-voltage operation: 1.7 V–1.9 V supply range reduces power draw compared with higher-voltage alternatives while matching DDR2 power rails.
• Compact BGA package: 84-ball BGA (8 × 12.5 mm) supports dense board layouts and surface-mount assembly.
• Specified operating range: 0°C–70°C ambient range and defined timing parameters (450 ps access time, 15 ns write cycle time) provide clear integration boundaries for system design.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160B-3DBL-TR positions as a straightforward 256 Mbit DDR2 parallel DRAM solution for designs that require a 16M × 16 organization, 333 MHz operation, and low-voltage (1.7 V–1.9 V) power rails. Its defined timing (450 ps access, 15 ns write cycle time) and compact 84-ball BGA package make it appropriate for board-level memory implementations where those explicit specifications match system requirements.

Engineers selecting this device will find clear electrical and mechanical parameters for integration into systems constrained by package size, voltage, timing, and ambient temperature (0°C–70°C). The part is suitable for designs that need a documented DDR2 parallel DRAM component with the listed performance and packaging characteristics.

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