IS43DR16320C-3DBI-TR

The IS43DR16320C-3DBI-TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16, delivered in an 84-ball WBGA package. It implements a double-data-rate architecture and on-chip features designed for high-speed parallel memory applications in embedded and system designs.

Targeted use cases include high-bandwidth buffering and system memory in industrial and commercial equipment that require a low-voltage DDR2 memory solution with programmable timing and on-die termination.

Key Features

• Memory Core and Organization 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks for concurrent operation.
• Double-Data-Rate Interface DDR2 interface supporting two data transfers per clock cycle with differential data strobe (DQS / /DQS).
• Prefetch and DLL 4-bit prefetch architecture and on-chip DLL to align DQ and DQS transitions with CK for timing integrity.
• Programmable Timing Supports programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5); programmable burst lengths of 4 or 8.
• Drive and Termination Adjustable data-output drive strength and on-die termination (ODT) for signal integrity tuning.
• Performance Specified clock frequency 333 MHz with access time listed at 450 ps and write cycle time (word/page) of 15 ns; timing grades include the –3D speed grade.
• Power Low-voltage operation with VDD / VDDQ = 1.8V ±0.1V (specified supply range 1.7V–1.9V) and JEDEC 1.8V I/O compatibility (SSTL_18-compatible).
• Package and Mounting 84-ball WBGA package (8 mm × 12.5 mm) for compact board-level integration; mounting suitable for standard BGA assembly.
• Operating Temperature Ambient operating range specified from −40°C to 85°C (TA).

Typical Applications

• Embedded System Memory Used as primary or extended DRAM in embedded controllers and processing modules requiring DDR2 parallel memory.
• High-Bandwidth Buffers Suitable for frame buffers and data staging where double-data-rate transfers and programmable burst lengths improve throughput.
• Industrial Electronics Applies to industrial controllers and instrumentation that need low-voltage DDR2 memory with extended ambient temperature support.

Unique Advantages

• DDR2 Performance in a Compact WBGA Delivers double-data-rate transfers and on-chip DLL in an 84-ball WBGA to save board area while supporting high throughput.
• Flexible Timing Configuration Programmable CAS and additive latencies and selectable burst lengths allow designers to tune memory timing for target system performance.
• Signal Integrity Controls Adjustable drive strength and on-die termination help optimize signal integrity across varying board layouts and termination schemes.
• Low-Voltage Operation 1.8V nominal VDD/VDDQ operation (1.7V–1.9V supply window) reduces power compared with higher-voltage memory options while maintaining JEDEC-compatible I/O levels.
• Industrial Temperature Range Specified ambient operation down to −40°C supports deployment in industrial environments.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

The IS43DR16320C-3DBI-TR offers a straightforward DDR2 DRAM solution combining 512 Mbit density, flexible timing options, and on-die features such as DLL and ODT to support reliable high-speed parallel memory designs. Its 84-ball WBGA package and low-voltage operation make it suitable for compact system boards where power and board space are constrained.

This device is well suited for engineers designing embedded systems, high-bandwidth buffers, and industrial electronics who require configurable timing, signal integrity controls, and operation across a broad ambient temperature range. The part’s documented timing grades and supply specifications provide clear parameters for system integration and long-term design planning.

Request a quote or submit an RFQ for IS43DR16320C-3DBI-TR to check availability and volume pricing for your design.