IS43DR16320D-3DBI-TR

The IS43DR16320D-3DBI-TR is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with on-chip DLL and differential data strobe to support high-speed synchronous memory transfers.

This device is suited to designs that require low-voltage DDR2 memory operation with programmable timing and compact WBGA packaging, offering a balance of speed, timing flexibility and board-level density.

Key Features

• Memory Core: 512 Mbit capacity organized as 32M × 16 with 4 internal banks for concurrent operation.
• DDR2 Double-Data-Rate Interface: Two data transfers per clock cycle with differential DQS/DQS̄ for synchronized data capture.
• Prefetch and On-Chip Timing: 4-bit prefetch architecture and on-chip DLL to align DQ and DQS transitions with CK.
• Programmable Timing: Supports programmable CAS latencies (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5); programmable burst lengths of 4 or 8.
• Power and I/O: VDD/VDDQ = 1.8 V ±0.1 V (product spec range 1.7 V–1.9 V); JEDEC-standard 1.8 V I/O (SSTL_18-compatible); adjustable data-output drive strength and on-die termination (ODT).
• Performance Metrics: Specified clock frequency 333 MHz and access time 450 ps; write cycle time (word page) 15 ns; key timing for -3D speed grade includes tRCD = 15 and tRP = 15.
• Package: 84-ball WBGA package, 8 mm × 12.5 mm (84-TWBGA).
• Operating Temperature: Ambient operating range −40°C to 85°C (TA).

Unique Advantages

• High-speed DDR2 transfers: Double-data-rate interface and differential DQS enable two data transfers per clock cycle for improved throughput at the specified clock rate.
• Flexible timing control: Multiple programmable CAS latencies and additive latency options allow tuning for system timing and performance trade-offs.
• System-level signal alignment: On-chip DLL aligns DQ and DQS transitions with CK, simplifying timing closure for synchronous designs.
• Low-voltage operation: 1.7 V–1.9 V supply range with JEDEC-standard 1.8 V I/O reduces power compared with higher-voltage alternatives while maintaining DDR2 signaling.
• Compact WBGA footprint: 84-TWBGA (8 × 12.5 mm) package provides board-level density for space-constrained designs.
• Integrated drive and termination options: Adjustable drive strength and on-die termination help optimize signal integrity on varying board layouts.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

IS43DR16320D-3DBI-TR positions itself as a versatile DDR2 memory component combining a 32M × 16 organization, DDR2 double-data-rate interface and on-chip timing features to support synchronous, high-speed memory designs. Its low-voltage operation, programmable timing options and integrated signal-conditioning features make it a practical choice where predictable timing and compact package size matter.

This device is well suited for engineers specifying a 512 Mbit DDR2 parallel memory subsystem that requires flexible latency settings, on-die termination and a WBGA footprint, while operating across an extended ambient temperature range.

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