IS43DR16320D-3DBI

The IS43DR16320D-3DBI is a 512 Mbit DDR2 SDRAM organized as 32M × 16, implementing a double-data-rate architecture with a 4-bit prefetch to deliver two data transfers per clock cycle. It provides a parallel DDR2 memory interface with JEDEC-compatible 1.8 V I/O and on-chip features for timing alignment and signal integrity.

This device is intended for designs that require DDR2 memory density and timing flexibility in an 84‑TWBGA (8 × 12.5 mm) package operating over an ambient temperature range of -40°C to 85°C and a supply range of 1.7 V to 1.9 V.

Key Features

• Memory Architecture 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4‑bit prefetch architecture for double-data-rate transfers.
• DDR2 Interface and I/O JEDEC-standard 1.8 V I/O (SSTL_18-compatible) supporting differential data strobe (DQS / DQS̄) and on-die termination (ODT).
• Timing and Latency Programmable CAS latency (CL) options 3, 4, 5, and 6; programmable additive latency (AL) 0–5; WRITE latency = READ latency − 1 tCK. Key timing examples available for DDR2-800, DDR2-667, DDR2-533, and DDR2-400 grades in the datasheet.
• Performance Parameters Typical clock frequency up to 333 MHz (DDR2 signalling), access time ~450 ps, and supported burst lengths of 4 or 8 for flexible data transfer sizing.
• Power Supply VDD / VDDQ range 1.7 V to 1.9 V (nominal 1.8 V ±0.1 V) compatible with standard DDR2 power domains.
• Signal Integrity and Drive On-chip DLL to align DQ/DQS with CK and adjustable data-output drive strength (full and reduced options) to match board-level termination and loading.
• Package and Mounting 84‑TWBGA package (8 mm × 12.5 mm) for compact board mounting; ball grid array footprint suitable for high-density assemblies.
• Operating Range Ambient operating temperature range specified as -40°C to 85°C (TA).

Typical Applications

• Embedded memory subsystems Use as on-board DDR2 SDRAM for systems requiring 512 Mbit density and parallel DDR2 interface for program/data storage and buffering.
• Industrial electronics Temperature range and VDD tolerance suit designs that require DDR2 memory operation in extended ambient conditions.
• Memory expansion for legacy DDR2 platforms Drop-in DDR2 device for platforms designed around JEDEC 1.8 V DDR2 signalling with programmable latency and burst configurations.

Unique Advantages

• JEDEC‑compatible 1.8 V I/O: Ensures standard DDR2 signalling and compatibility with SSTL_18 interfaces for system-level integration.
• Flexible timing configuration: Multiple CAS latency and additive latency settings plus programmable burst lengths enable tuning for diverse system timing and throughput needs.
• On-chip timing and termination: DLL and on-die termination (ODT) improve DQ/DQS alignment and reduce external termination complexity on the PCB.
• Compact BGA package: 84‑TWBGA (8 × 12.5 mm) delivers 512 Mbit density in a small footprint for space-constrained designs.
• Wide operating supply and temperature: 1.7 V–1.9 V supply range and -40°C to 85°C ambient rating support reliable operation across varied deployments.

Why Choose IC DRAM 512MBIT PAR 84TWBGA?

The IS43DR16320D-3DBI positions itself as a configurable DDR2 memory component offering 512 Mbit density, programmable latency and burst options, and on-chip features that simplify board-level timing and termination. Its JEDEC-compatible 1.8 V I/O, DLL, differential DQS, and ODT make it suitable for systems designed around standard DDR2 interfaces.

This device is appropriate for engineers and procurement teams specifying DDR2 memory for embedded and industrial designs that require a compact 84‑TWBGA package, flexible timing, and an ambient operating range down to -40°C. The combination of density, timing options, and on-chip signal features supports scalable memory implementations where footprint and integration are key considerations.

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